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Duxstad, K. J., Haller, E. E. (1997) Comment on “Schottky contact and thermal stability of Ni on n-type GaN” [J. Appl. Phys. 80, 1623 (1996)]. Journal of Applied Physics, 82 (1). 491-492 doi:10.1063/1.365845

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Reference TypeJournal (article/letter/editorial)
TitleComment on “Schottky contact and thermal stability of Ni on n-type GaN” [J. Appl. Phys. 80, 1623 (1996)]
JournalJournal of Applied Physics
AuthorsDuxstad, K. J.Author
Haller, E. E.Author
Year1997 (July)Volume82
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.365845Search in ResearchGate
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Mindat Ref. ID5087184Long-form Identifiermindat:1:5:5087184:1
GUID0
Full ReferenceDuxstad, K. J., Haller, E. E. (1997) Comment on “Schottky contact and thermal stability of Ni on n-type GaN” [J. Appl. Phys. 80, 1623 (1996)]. Journal of Applied Physics, 82 (1). 491-492 doi:10.1063/1.365845
Plain TextDuxstad, K. J., Haller, E. E. (1997) Comment on “Schottky contact and thermal stability of Ni on n-type GaN” [J. Appl. Phys. 80, 1623 (1996)]. Journal of Applied Physics, 82 (1). 491-492 doi:10.1063/1.365845
In(1997, July) Journal of Applied Physics Vol. 82 (1) AIP Publishing

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Guo, J. D., Pan, F. M., Feng, M. S., Guo, R. J., Chou, P. F., Chang, C. Y. (1996) Schottky contact and the thermal stability of Ni onn‐type GaN. Journal of Applied Physics, 80 (3). 1623-1627 doi:10.1063/1.363822
Duxstad, K. J., Haller, E. E., Yu, K. M. (1997) High temperature behavior of Pt and Pd on GaN. Journal of Applied Physics, 81 (7). 3134-3137 doi:10.1063/1.364091
Guérin, Roland, Guivarc’h, André (1997) Comment on “Phase equilibria of the Ga–Ni–As ternary system” [J. Appl. Phys.80, 543 (1996)]. Journal of Applied Physics, 82 (1). 493-495 doi:10.1063/1.365582
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Ho, C. Y. (2007) Comment on “Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer” [J. Appl. Phys. 99, 026106 (2006)]. Journal of Applied Physics, 101 (7). 76101pp. doi:10.1063/1.2717136
Ruvimov, S., Liliental‐Weber, Z., Washburn, J., Duxstad, K. J., Haller, E. E., Fan, Z.‐F., Mohammad, S. N., Kim, W., Botchkarev, A. E., Morkoç, H. (1996) Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN. Applied Physics Letters, 69 (11). 1556-1558 doi:10.1063/1.117060
Bermudez, V. M. (2003) Comment on “Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces” [J. Appl. Phys. 91, 732 (2002)]. Journal of Applied Physics, 93 (6). 3677-3678 doi:10.1063/1.1542925
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