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Davydov, V. Yu., Averkiev, N. S., Goncharuk, I. N., Nelson, D. K., Nikitina, I. P., Polkovnikov, A. S., Smirnov, A. N., Jacobson, M. A., Semchinova, O. K. (1997) Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC. Journal of Applied Physics, 82 (10). 5097-5102 doi:10.1063/1.366310

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Reference TypeJournal (article/letter/editorial)
TitleRaman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
JournalJournal of Applied Physics
AuthorsDavydov, V. Yu.Author
Averkiev, N. S.Author
Goncharuk, I. N.Author
Nelson, D. K.Author
Nikitina, I. P.Author
Polkovnikov, A. S.Author
Smirnov, A. N.Author
Jacobson, M. A.Author
Semchinova, O. K.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366310Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087222Long-form Identifiermindat:1:5:5087222:0
GUID0
Full ReferenceDavydov, V. Yu., Averkiev, N. S., Goncharuk, I. N., Nelson, D. K., Nikitina, I. P., Polkovnikov, A. S., Smirnov, A. N., Jacobson, M. A., Semchinova, O. K. (1997) Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC. Journal of Applied Physics, 82 (10). 5097-5102 doi:10.1063/1.366310
Plain TextDavydov, V. Yu., Averkiev, N. S., Goncharuk, I. N., Nelson, D. K., Nikitina, I. P., Polkovnikov, A. S., Smirnov, A. N., Jacobson, M. A., Semchinova, O. K. (1997) Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC. Journal of Applied Physics, 82 (10). 5097-5102 doi:10.1063/1.366310
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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