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Inglefield, C. E., DeLong, M. C., Taylor, P. C., Chun, Y. S., Ho, I. H., Stringfellow, G. B., Kim, J. H., Seong, T. Y. (1997) Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio. Journal of Applied Physics, 82 (10). 5107-5113 doi:10.1063/1.366312

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio
JournalJournal of Applied Physics
AuthorsInglefield, C. E.Author
DeLong, M. C.Author
Taylor, P. C.Author
Chun, Y. S.Author
Ho, I. H.Author
Stringfellow, G. B.Author
Kim, J. H.Author
Seong, T. Y.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366312Search in ResearchGate
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Mindat Ref. ID5087227Long-form Identifiermindat:1:5:5087227:5
GUID0
Full ReferenceInglefield, C. E., DeLong, M. C., Taylor, P. C., Chun, Y. S., Ho, I. H., Stringfellow, G. B., Kim, J. H., Seong, T. Y. (1997) Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio. Journal of Applied Physics, 82 (10). 5107-5113 doi:10.1063/1.366312
Plain TextInglefield, C. E., DeLong, M. C., Taylor, P. C., Chun, Y. S., Ho, I. H., Stringfellow, G. B., Kim, J. H., Seong, T. Y. (1997) Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio. Journal of Applied Physics, 82 (10). 5107-5113 doi:10.1063/1.366312
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Chun, Y. S., Murata, H., Lee, S. H., Ho, I. H., Hsu, T. C., Stringfellow, G. B., Inglefield, C. E., DeLong, M. C., Taylor, P. C., Kim, J. H., Seong, T.-Y. (1997) Heterostructures in GaInP grown using a change in V/III ratio. Journal of Applied Physics, 81 (12). 7778-7786 doi:10.1063/1.365387
Hsu, Y., Stringfellow, G. B., Inglefield, C. E., DeLong, M. C., Taylor, P. C., Cho, J. H., Seong, T.-Y. (1998) Quantum wells due to ordering in GaInP. Applied Physics Letters, 73 (26). 3905-3907 doi:10.1063/1.122931
Chun, Y. S., Murata, H., Hsu, T. C., Ho, I. H., Su, L. C., Hosokawa, Y., Stringfellow, G. B. (1996) Effects of V/III ratio on ordering in GaInP: Atomic scale mechanisms. Journal of Applied Physics, 79 (9). 6900-6906 doi:10.1063/1.361513
Murata, H., Hsu, T. C., Ho, I. H., Su, L. C., Hosokawa, Y., Stringfellow, G. B. (1996) Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP. Applied Physics Letters, 68 (13). 1796-1798 doi:10.1063/1.116016
Seong, Tae-Yeon, Kim, Joon Hyung, Chun, Y. S., Stringfellow, G. B. (1997) Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers. Applied Physics Letters, 70 (23). 3137-3139 doi:10.1063/1.119113
Hsu, T. C., Stringfellow, G. B., Kim, J. H., Seong, T. Y. (1998) Surface photoabsorption transients and ordering in GaInP. Journal of Applied Physics, 83 (6). 3350-3355 doi:10.1063/1.367122
Murata, H., Ho, I. H., Su, L. C., Hosokawa, Y., Stringfellow, G. B. (1996) Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP. Journal of Applied Physics, 79 (9). 6895-6899 doi:10.1063/1.361430
Lee, S. H., Fetzer, C. M., Stringfellow, G. B., Choi, C.-J., Seong, T. Y. (1999) Step structure and ordering in Zn-doped GaInP. Journal of Applied Physics, 86 (4). 1982-1987 doi:10.1063/1.370997
Hsu, Y., Fetzer, C. M., Stringfellow, G. B., Shurtleff, J. K., Choi, C. J., Seong, T. Y. (2000) Heterostructures in GaInP grown using a change in Te doping. Journal of Applied Physics, 87 (11). 7776-7781 doi:10.1063/1.373453
Lee, S. H., Fetzer, C. Y., Stringfellow, G. B., Lee, D. H., Seong, T. Y. (1999) Te doping of GaInP: Ordering and step structure. Journal of Applied Physics, 85 (7). 3590-3596 doi:10.1063/1.369719
Chun, Y. S., Lee, S. H., Ho, I. H., Stringfellow, G. B. (1997) Effect of growth rate on step structure and ordering in GaInP. Journal of Applied Physics, 81 (2). 646-649 doi:10.1063/1.364205
 
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