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Strong, R., Misra, R., Greve, D. W., Zalm, P. C. (1997) GexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures. Journal of Applied Physics, 82 (10). 5191-5198 doi:10.1063/1.366324

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Reference TypeJournal (article/letter/editorial)
TitleGexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures
JournalJournal of Applied Physics
AuthorsStrong, R.Author
Misra, R.Author
Greve, D. W.Author
Zalm, P. C.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366324Search in ResearchGate
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Mindat Ref. ID5087251Long-form Identifiermindat:1:5:5087251:2
GUID0
Full ReferenceStrong, R., Misra, R., Greve, D. W., Zalm, P. C. (1997) GexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures. Journal of Applied Physics, 82 (10). 5191-5198 doi:10.1063/1.366324
Plain TextStrong, R., Misra, R., Greve, D. W., Zalm, P. C. (1997) GexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures. Journal of Applied Physics, 82 (10). 5191-5198 doi:10.1063/1.366324
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Strong, R., Greve, D. W., Pellegrini, P., Weeks, M. (1997) GexSi1−x infrared detectors II. Carrier escape probability and detector performance. Journal of Applied Physics, 82 (10). 5199-5205 doi:10.1063/1.366325
Misra, R., Greve, D. W., Schlesinger, T. E. (1995) Infrared absorption in GexSi1−x quantum wells. Applied Physics Letters, 67 (17). 2548-2550 doi:10.1063/1.114454
Levine, B. F. (1997) Response to “Comment on ‘Quantum well infrared detectors’ ” [J. Appl. Phys.81, 7076 (1997)]. Journal of Applied Physics, 82 (10). 5271 doi:10.1063/1.366400
Jiang, P., Kok, W. C. (2001) Far-infrared absorption spectra of doped quantum well structures. Journal of Applied Physics, 90 (3). 1271-1274 doi:10.1063/1.1383261
Williams, G. M., DeWames, R. E., Farley, C. W., Anderson, R. J. (1992) Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors. Applied Physics Letters, 60 (11). 1324-1326 doi:10.1063/1.107331
Chiu, L. C., Smith, J. S., Margalit, S., Yariv, A. (1983) Internal photoemission from quantum well heterojunction superlattices by phononless free‐carrier absorption. Applied Physics Letters, 43 (4). 331-332 doi:10.1063/1.94345
Raisky, O. Y., Wang, W. B., Alfano, R. R., Reynolds, C. L., Stampone, D. V., Focht, M. W. (1998) In1−xGaxAs1−yPy/InP multiple quantum well solar cell structures. Journal of Applied Physics, 84 (10). 5790-5794 doi:10.1063/1.368870
Park, J. S., Lin, T. L., Jones, E. W., Del Castillo, H. M., Gunapala, S. D. (1994) Long‐wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers. Applied Physics Letters, 64 (18). 2370-2372 doi:10.1063/1.111617
Dafesh, P. A. (1992) Characterization of GaAs/AlxGa1−xAs multiple quantum well infrared detector structures using photoreflectance. Journal of Applied Physics, 71 (10). 5154-5160 doi:10.1063/1.350570
Beck, W. A. (1993) Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors. Applied Physics Letters, 63 (26). 3589-3591 doi:10.1063/1.110105
Nathan, Vaidya (1997) Comment on “Quantum-well infrared detectors” [J. Appl. Phys.74, R18 (1993)]. Journal of Applied Physics, 81 (10). 7076 doi:10.1063/1.365271
 
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