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Kim, Dong Joon, Kim, Yong Tae, Park, Jong-Wan (1997) Nanostructured Ta-Si-N diffusion barriers for Cu metallization. Journal of Applied Physics, 82 (10). 4847-4851 doi:10.1063/1.366346

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Reference TypeJournal (article/letter/editorial)
TitleNanostructured Ta-Si-N diffusion barriers for Cu metallization
JournalJournal of Applied Physics
AuthorsKim, Dong JoonAuthor
Kim, Yong TaeAuthor
Park, Jong-WanAuthor
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366346Search in ResearchGate
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Mindat Ref. ID5087295Long-form Identifiermindat:1:5:5087295:6
GUID0
Full ReferenceKim, Dong Joon, Kim, Yong Tae, Park, Jong-Wan (1997) Nanostructured Ta-Si-N diffusion barriers for Cu metallization. Journal of Applied Physics, 82 (10). 4847-4851 doi:10.1063/1.366346
Plain TextKim, Dong Joon, Kim, Yong Tae, Park, Jong-Wan (1997) Nanostructured Ta-Si-N diffusion barriers for Cu metallization. Journal of Applied Physics, 82 (10). 4847-4851 doi:10.1063/1.366346
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Kim, Yong Tae, Kim, Dong Joon, Park, Jong-Wan (1999) N2+Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure. Japanese Journal of Applied Physics, 38. 2993-2996 doi:10.1143/jjap.38.2993
Lee, Seoghyeong, Kim, Dong Joon, Yang, Sung-Hoon, Park, Jeongwon, Sohn, Seil, Oh, Kyunghui, Kim, Yong-Tae, Kim, Jung-Yeul, Yeom, Geun-Young, Park, Jong-Wan (1999) Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide. Journal of Applied Physics, 85 (1). 473-477 doi:10.1063/1.369410
Kim, Dong Joon, Sim, Hyun Sang, Lee, Seoghyeong, Kim, Yong Tae, Kim, Seong-Il, Park, Jong-Wan (2001) Improvement of the Reliability of a Cu/W–N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W–N Thin Film. Japanese Journal of Applied Physics, 40. 1214-1217 doi:10.1143/jjap.40.1214
Kwak, Joon Seop, Baik, Hong Koo, Kim, Jong-Hoon, Lee, Sung-Man (1998) Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film. Applied Physics Letters, 72 (22). 2832-2834 doi:10.1063/1.121472
Jo, Moon-Ho, Park, Hyung-Ho, Kim, Dong-Joon, Hyun, Sang-Hoon, Choi, Se-Young, Paik, Jong-Tae (1997) SiO2 aerogel film as a novel intermetal dielectric. Journal of Applied Physics, 82 (3). 1299-1304 doi:10.1063/1.365902
Kwak, Joon Seop, Baik, Hong Koo, Kim, Jong-Hoon, Lee, Sung-Man, Ryu, Hyuk Ju, Je, Jung Ho (1999) Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization. Journal of Applied Physics, 85 (9). 6898-6903 doi:10.1063/1.370209
Hong, Seok Woo, Lee, Yong Sun, Lee, You-Kee, Kim, In Soo, Park, Ki-Chul, Kim, Min, Park, Jong-Wan (2004) Electroless Copper Deposition on H2Plasma-Treated TaNx(x=0–1) Diffusion Barriers. Japanese Journal of Applied Physics, 43 (10) 6981-6983 doi:10.1143/jjap.43.6981
Kim, Dong-Won, Park, Yong-Joon, Kang, Seung-Min, An, Hyo-Sun, Park, Jong-Soo (2010) Pd–Cu–Ni Ternary Alloy Membrane with High Temperature Durability for Hydrogen Separation and Purification. Japanese Journal of Applied Physics, 49 (10) 100208 doi:10.1143/jjap.49.100208
Kim, Jaehwa, Seop Kwak, Joon, Yoon, Dong-Soo, Koo Baik, Hong, Lee, Sung-Man (1999) Effects of CeO2 incorporation on the performance of a Ta diffusion barrier for Al metallization. Journal of Applied Physics, 85 (4). 2170-2174 doi:10.1063/1.369522
Park, Yong-Jik, Kim, Jong-Jean (1999) Fluorine implantation effect on boron diffusion in Si. Journal of Applied Physics, 85 (2). 803-806 doi:10.1063/1.369163
Kim, Yong Jeong, Kim, Tae-Joon, Kim, Tae-Kyung, Park, Byungwoo, Song, Jong Han (2001) The Loss Kinetics of Substitutional Carbon in Si1-xCxRegrown by Solid Phase Epitaxy. Japanese Journal of Applied Physics, 40. 773-776 doi:10.1143/jjap.40.773
 
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