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Sugiura, L., Itaya, K., Nishio, J., Fujimoto, H., Kokubun, Y. (1997) Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers. Journal of Applied Physics, 82 (10). 4877-4882 doi:10.1063/1.366350

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Reference TypeJournal (article/letter/editorial)
TitleEffects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers
JournalJournal of Applied Physics
AuthorsSugiura, L.Author
Itaya, K.Author
Nishio, J.Author
Fujimoto, H.Author
Kokubun, Y.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366350Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087304Long-form Identifiermindat:1:5:5087304:3
GUID0
Full ReferenceSugiura, L., Itaya, K., Nishio, J., Fujimoto, H., Kokubun, Y. (1997) Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers. Journal of Applied Physics, 82 (10). 4877-4882 doi:10.1063/1.366350
Plain TextSugiura, L., Itaya, K., Nishio, J., Fujimoto, H., Kokubun, Y. (1997) Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers. Journal of Applied Physics, 82 (10). 4877-4882 doi:10.1063/1.366350
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Hoshino, K., Yanagita, N., Araki, M., Tadatomo, K. (2007) Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE. Journal of Crystal Growth, 298. 232-234 doi:10.1016/j.jcrysgro.2006.10.189
Nishio, Johji, Sugiura, Lisa, Fujimoto, Hidetoshi, Kokubun, Yoshihiro, Itaya, Kazuhiko (1997) Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes. Applied Physics Letters, 70 (25). 3431-3433 doi:10.1063/1.119193
Chichibu, S., Arita, M., Nakanishi, H., Nishio, J., Sugiura, L., Kokubun, Y., Itaya, K. (1998) Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 83 (5). 2860-2862 doi:10.1063/1.367048
Ito, Takahiro, Sumiya, Masatomo, Takano, Yasushi, Ohtsuka, Kohji, Fuke, Shunro (1999) Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 38. 649-653 doi:10.1143/jjap.38.649
An, H. Y., Cha, O. H., Kim, J. H., Yang, G. M., Lim, K. Y., Suh, E. -K., Lee, H. J. (1999) Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer. Journal of Applied Physics, 85 (5). 2888-2893 doi:10.1063/1.369052
Lin, C. F., Cheng, H. C., Chi, G. C., Feng, M. S., Guo, J. D., Minghuang Hong, J., Chen, C. Y. (1997) Growth and characterizations of GaN on SiC substrates with buffer layers. Journal of Applied Physics, 82 (5). 2378-2382 doi:10.1063/1.366048
Grandjean, N., Leroux, M., Laügt, M., Massies, J. (1997) Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers. Applied Physics Letters, 71 (2). 240-242 doi:10.1063/1.119526
Watanabe, Yasuyuki, Sano, Masatoshi (2003) Low-Temperature Growth of GaN Epitaxial Layers with Buffer Layers by Reactive Close-Spaced Method. Japanese Journal of Applied Physics, 42. 384-388 doi:10.1143/jjap.42.384
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Sugiura, Lisa, Suzuki, Mariko, Nishio, Johji, Itaya, Kazuhiko, Kokubun, Yoshihiro, Ishikawa, Masayuki (1998) Characteristics of Mg-Doped GaN and AlGaN Grown by H2-Ambient and N2-Ambient Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 37. 3878-3881 doi:10.1143/jjap.37.3878
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