Vote for your favorite mineral in #MinCup25! - Calcite vs. Perovskite
This match of heavy hitters is bound to end in heartbreak as classic calcite faces off against futuristic perovskite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Patriarche, G., Jeannès, F., Oudar, J.-L., Glas, F. (1997) Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices. Journal of Applied Physics, 82 (10). 4892-4903 doi:10.1063/1.366353

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleStructure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
JournalJournal of Applied Physics
AuthorsPatriarche, G.Author
Jeannès, F.Author
Oudar, J.-L.Author
Glas, F.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366353Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087310Long-form Identifiermindat:1:5:5087310:4
GUID0
Full ReferencePatriarche, G., Jeannès, F., Oudar, J.-L., Glas, F. (1997) Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices. Journal of Applied Physics, 82 (10). 4892-4903 doi:10.1063/1.366353
Plain TextPatriarche, G., Jeannès, F., Oudar, J.-L., Glas, F. (1997) Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices. Journal of Applied Physics, 82 (10). 4892-4903 doi:10.1063/1.366353
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Patriarche, G., Mériadec, C., LeRoux, G., Deparis, C., Sagnes, I., Harmand, J.-C., Glas, F. (2000) GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth. Applied Surface Science, 164. 15-21 doi:10.1016/s0169-4332(00)00329-9
Sagalowicz, L., Rudra, A., Kapon, E., Hammar, M., Salomonsson, F., Black, A., Jouneau, P.-H., Wipijewski, T. (2000) Defects, structure, and chemistry of InP–GaAs interfaces obtained by wafer bonding. Journal of Applied Physics, 87 (9). 4135-4146 doi:10.1063/1.373042
Lemaître, A., Patriarche, G., Glas, F. (2004) Composition profiling of InAs∕GaAs quantum dots. Applied Physics Letters, 85 (17). 3717-3719 doi:10.1063/1.1811796
Largeau, L., Patriarche, G., Glas, F., Le Bourhis, E. (2004) Absolute determination of the asymmetry of the in-plane deformation of GaAs (001). Journal of Applied Physics, 95 (8). 3984-3987 doi:10.1063/1.1650891
Harmand, J. C., Patriarche, G., Péré-Laperne, N., Mérat-Combes, M-N., Travers, L., Glas, F. (2005) Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth. Applied Physics Letters, 87 (20). 203101pp. doi:10.1063/1.2128487
Alexe, Marin, Kästner, Gerhard, Hesse, Dietrich, Gösele, Ulrich (1997) Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding. Applied Physics Letters, 70 (25). 3416-3418 doi:10.1063/1.119189
Rousseau *, K., Eymery, J., Fournel, F., Morniroli, J.-P., Rouvière, J.-L. (2005) (001) silicon surfacial grain boundaries obtained by direct wafer bonding process: accurate control of the structure before bonding. Philosophical Magazine, 85 (21). 2415-2448 doi:10.1080/14786430500070834
Gui, C., Elwenspoek, M., Tas, N., Gardeniers, J. G. E. (1999) The effect of surface roughness on direct wafer bonding. Journal of Applied Physics, 85 (10). 7448-7454 doi:10.1063/1.369377
Radu, I., Szafraniak, I., Scholz, R., Alexe, M., Gösele, U. (2003) GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding. Journal of Applied Physics, 94 (12). 7820pp. doi:10.1063/1.1627459
Dumont, H., Auvray, L., Monteil, Y., Bondoux, C., Largeau, L., Patriarche, G. (2002) Microscopic structure and optical properties of GaAs1−xNx/GaAs(001) interface grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 80 (14). 2460-2462 doi:10.1063/1.1468272
Shi, Frank, MacLaren, Scott, Xu, Chaofeng, Cheng, K. Y., Hsieh, K. C. (2003) Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength. Journal of Applied Physics, 93 (9). 5750-5756 doi:10.1063/1.1563825
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 4, 2025 16:35:29
Go to top of page