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Wong, K. C., Yang, Celeste, Thomas, Mason, Blank, Hans-Richard (1997) Study of the morphology of the InAs-on-AlSb interface. Journal of Applied Physics, 82 (10). 4904-4907 doi:10.1063/1.366354

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Reference TypeJournal (article/letter/editorial)
TitleStudy of the morphology of the InAs-on-AlSb interface
JournalJournal of Applied Physics
AuthorsWong, K. C.Author
Yang, CelesteAuthor
Thomas, MasonAuthor
Blank, Hans-RichardAuthor
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366354Search in ResearchGate
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Mindat Ref. ID5087312Long-form Identifiermindat:1:5:5087312:2
GUID0
Full ReferenceWong, K. C., Yang, Celeste, Thomas, Mason, Blank, Hans-Richard (1997) Study of the morphology of the InAs-on-AlSb interface. Journal of Applied Physics, 82 (10). 4904-4907 doi:10.1063/1.366354
Plain TextWong, K. C., Yang, Celeste, Thomas, Mason, Blank, Hans-Richard (1997) Study of the morphology of the InAs-on-AlSb interface. Journal of Applied Physics, 82 (10). 4904-4907 doi:10.1063/1.366354
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Thomas, Mason, Blank, Hans-Richard, Wong, K. C., Nguyen, Chanh, Kroemer, Herbert, Hu, Evelyn L. (1996) Flux-periodic resistance oscillations in arrays of superconducting weak links based on InAs-AlSb quantum wells with Nb electrodes. Physical Review B, 54 (4) doi:10.1103/physrevb.54.r2311
Blank, H.‐R., Thomas, M., Wong, K. C., Kroemer, H. (1996) Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 69 (14). 2080-2082 doi:10.1063/1.116886
Tuttle, Gary, Kroemer, Herbert, English, John H. (1990) Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface. Journal of Applied Physics, 67 (6). 3032-3037 doi:10.1063/1.345426
Ohtani, K., Ohno, H. (2003) InAs/AlSb quantum cascade lasers operating at 10 μm. Applied Physics Letters, 82 (7). 1003-1005 doi:10.1063/1.1545151
Sela, I., Bolognesi, C. R., Samoska, L. A., Kroemer, H. (1992) Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes. Applied Physics Letters, 60 (26). 3283-3285 doi:10.1063/1.106720
Wagner, J., Schmitz, J., Behr, D., Ralston, J. D., Koidl, P. (1994) Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular‐beam epitaxy. Applied Physics Letters, 65 (10). 1293-1295 doi:10.1063/1.112098
Kitabayashi, H., Waho, T., Yamamoto, M. (1997) Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers. Applied Physics Letters, 71 (4). 512-514 doi:10.1063/1.119594
Yang, M. J., Cheng, K. A., Yang, C. H., Culbertson, J. C. (2002) A nanofabrication scheme for InAs/AlSb heterostructures. Applied Physics Letters, 80 (7). 1201-1203 doi:10.1063/1.1449526
Wong, K. B., Jaros, M. (1991) Blue Stark shifts in (InAs)1−x(GaSb)x‐AlSb superlattices. Applied Physics Letters, 59 (14). 1776-1778 doi:10.1063/1.106197
Cheng, K. A., Yang, C. H., Yang, M. J. (2000) Nanometer-size InAs/AlSb quantum wires: Fabrication and characterization of Aharonov–Bohm quantum rings. Journal of Applied Physics, 88 (9). 5272-5276 doi:10.1063/1.1316053
Thomas, Mason, Blank, Hans-Richard, Wong, Ki C., Kroemer, Herbert, Hu, Evelyn (1998) Current-voltage characteristics of semiconductor-coupled superconducting weak links with large electrode separations. Physical Review B, 58 (17) 11676-11684 doi:10.1103/physrevb.58.11676
 
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