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Schroeder, David J., Rockett, Angus A. (1997) Electronic effects of sodium in epitaxial CuIn1−xGaxSe2. Journal of Applied Physics, 82 (10). 4982-4985 doi:10.1063/1.366365

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Reference TypeJournal (article/letter/editorial)
TitleElectronic effects of sodium in epitaxial CuIn1−xGaxSe2
JournalJournal of Applied Physics
AuthorsSchroeder, David J.Author
Rockett, Angus A.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366365Search in ResearchGate
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Mindat Ref. ID5087334Long-form Identifiermindat:1:5:5087334:4
GUID0
Full ReferenceSchroeder, David J., Rockett, Angus A. (1997) Electronic effects of sodium in epitaxial CuIn1−xGaxSe2. Journal of Applied Physics, 82 (10). 4982-4985 doi:10.1063/1.366365
Plain TextSchroeder, David J., Rockett, Angus A. (1997) Electronic effects of sodium in epitaxial CuIn1−xGaxSe2. Journal of Applied Physics, 82 (10). 4982-4985 doi:10.1063/1.366365
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Schroeder, David J., Hernandez, Jose Luis, Berry, Gene D., Rockett, Angus A. (1998) Hole transport and doping states in epitaxial CuIn1−xGaxSe2. Journal of Applied Physics, 83 (3). 1519-1526 doi:10.1063/1.366860
Schroeder, David J., Berry, Gene D., Rockett, Angus A. (1996) Gallium diffusion and diffusivity in CuInSe2 epitaxial layers. Applied Physics Letters, 69 (26). 4068-4070 doi:10.1063/1.117820
Heath, J. T., Cohen, J. D., Shafarman, W. N., Liao, D. X., Rockett, A. A. (2002) Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices. Applied Physics Letters, 80 (24). 4540-4542 doi:10.1063/1.1485301
Young, David L., Crandall, Richard S. (2003) An electrostatic barrier to trap filling in CuIn1−xGaxSe2. Applied Physics Letters, 83 (12). 2363-2365 doi:10.1063/1.1613034
Chen, Rongzhen, Persson, Clas (2012) Band-edge density-of-states and carrier concentrations in intrinsic and p-type CuIn1−xGaxSe2. Journal of Applied Physics, 112 (10). 103708pp. doi:10.1063/1.4767120
Heath, Jennifer T., Cohen, J. David, Shafarman, William N. (2004) Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling. Journal of Applied Physics, 95 (3). 1000-1010 doi:10.1063/1.1633982
Liao, Dongxiang, Rockett, Angus (2008) The structure and morphology of (112)-oriented Cu(In,Ga)Se2 epitaxial films. Journal of Applied Physics, 104 (9). 94908pp. doi:10.1063/1.3009961
Huebener, R. P. (1975) Self‐heating effects in thin‐film type‐I superconductors. Journal of Applied Physics, 46 (11). 4982-4985 doi:10.1063/1.321485
Pudov, A. O., Kanevce, A., Al-Thani, H. A., Sites, J. R., Hasoon, F. S. (2005) Secondary barriers in CdS–CuIn1−xGaxSe2 solar cells. Journal of Applied Physics, 97 (6). 64901pp. doi:10.1063/1.1850604
Nelson, A. J., Berry, G., Rockett, Angus, Shuh, D. K., Carlisle, J. A., Sutherland, D. G. J., Terminello, L. J. (1997) Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxial CuInSe2. Applied Physics Letters, 70 (14). 1873-1875 doi:10.1063/1.118717
Bhattacharya, R. N., Batchelor, W., Hiltner, J. F., Sites, J. R. (1999) Thin-film CuIn1−xGaxSe2 photovoltaic cells from solution-based precursor layers. Applied Physics Letters, 75 (10). 1431-1433 doi:10.1063/1.124716
 
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