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Lee, Jong-Lam, Mun, Jae Kyoung, Lee, Byung-Teak (1997) Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs. Journal of Applied Physics, 82 (10). 5011-5016 doi:10.1063/1.366371

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Reference TypeJournal (article/letter/editorial)
TitleThermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs
JournalJournal of Applied Physics
AuthorsLee, Jong-LamAuthor
Mun, Jae KyoungAuthor
Lee, Byung-TeakAuthor
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366371Search in ResearchGate
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Mindat Ref. ID5087346Long-form Identifiermindat:1:5:5087346:9
GUID0
Full ReferenceLee, Jong-Lam, Mun, Jae Kyoung, Lee, Byung-Teak (1997) Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs. Journal of Applied Physics, 82 (10). 5011-5016 doi:10.1063/1.366371
Plain TextLee, Jong-Lam, Mun, Jae Kyoung, Lee, Byung-Teak (1997) Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs. Journal of Applied Physics, 82 (10). 5011-5016 doi:10.1063/1.366371
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Kim, Yi-Tae, Lee, Jong-Lam, Mun, Jae Kyoung, Kim, Haecheon (1997) Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer. Applied Physics Letters, 71 (18). 2656-2658 doi:10.1063/1.120169
Kim, Yi-Tae, Lee, Jong-Lam, Lee, Byung-Teak (1998) Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layer. Journal of Applied Physics, 84 (2). 911-917 doi:10.1063/1.368155
Choi, Kyoung Jin, Han, Sang Youn, Lee, Jong-Lam (2003) Degradation mechanism of Schottky diodes on inductively coupled plasma-etchedn-type 4H-SiC. Journal of Applied Physics, 94 (3). 1765-1768 doi:10.1063/1.1581347
Kim, Jong Kyu, Je, Jung Ho, Lee, Jong-Lam, Park, Yong Jo, Lee, Byung-Teak (2000) Microstructural Investigation of Ni/Au Ohmic Contact on p-Type GaN. Journal of the Electrochemical Society, 147. 4645pp. doi:10.1149/1.1394117
Han, Sang Youn, Jang, Ho Won, Lee, Jong-Lam (2003) IrO2 Schottky contact on n-type 4H-SiC. Applied Physics Letters, 82 (26). 4726-4728 doi:10.1063/1.1588365
Lee, Jong-Lam, Kim, Yi-Tae, Kwak, Joon Seop, Baik, Hong Koo, Uedono, Akira, Tanigawa, Shoichiro (1997) Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs. Journal of Applied Physics, 82 (11). 5460-5464 doi:10.1063/1.365572
Lim, Jong-Won, Mun, Jae-Kyoung, Lee, Jae-Jin (1999) Investigation of the properties of Pd/Ge/Au/Pd/Au ohmic contacts to n-GaAs formed with different ambients. Applied Surface Science, 148. 34-41 doi:10.1016/s0169-4332(99)00138-5
Lim, Jong-Won, Mun, Jae-Kyoung, An, Sung-Jong, Nam, Sungun, Kwak, Myeong-Hyeon, Kim, Haecheon, Lee, Jae-Jin (2000) PdGe-Based Ohmic Contact on n-GaAs with Highly and Poorly Doped Layers. Japanese Journal of Applied Physics, 39. 2546-2549 doi:10.1143/jjap.39.2546
Kim, Jong Kyu, Jang, Ho Won, Lee, Jong-Lam (2003) Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes. Journal of Applied Physics, 94 (11). 7201-7205 doi:10.1063/1.1625101
Jang, Ho Won, Kim, Soo Young, Lee, Jong-Lam (2003) Mechanism for Ohmic contact formation of oxidized Ni/Au onp-type GaN. Journal of Applied Physics, 94 (3). 1748-1752 doi:10.1063/1.1586983
Lee, Jong-Lam, Kim, Yi-Tae, Oh, Jung-Woo, Lee, Byung-Teak (2001) AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact. Japanese Journal of Applied Physics, 40. 1188-1193 doi:10.1143/jjap.40.1188
 
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