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Lander, R. J. P., Emeleus, C. J., McGregor, B. M., Parker, E. H. C., Whall, T. E., Evans, A. G. R., Kennedy, G. P. (1997) Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K. Journal of Applied Physics, 82 (10). 5210-5216 doi:10.1063/1.366385

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Reference TypeJournal (article/letter/editorial)
TitleStudy of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K
JournalJournal of Applied Physics
AuthorsLander, R. J. P.Author
Emeleus, C. J.Author
McGregor, B. M.Author
Parker, E. H. C.Author
Whall, T. E.Author
Evans, A. G. R.Author
Kennedy, G. P.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366385Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087373Long-form Identifiermindat:1:5:5087373:3
GUID0
Full ReferenceLander, R. J. P., Emeleus, C. J., McGregor, B. M., Parker, E. H. C., Whall, T. E., Evans, A. G. R., Kennedy, G. P. (1997) Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K. Journal of Applied Physics, 82 (10). 5210-5216 doi:10.1063/1.366385
Plain TextLander, R. J. P., Emeleus, C. J., McGregor, B. M., Parker, E. H. C., Whall, T. E., Evans, A. G. R., Kennedy, G. P. (1997) Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K. Journal of Applied Physics, 82 (10). 5210-5216 doi:10.1063/1.366385
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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