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Cova, P., Singh, A., Masut, R. A. (1997) A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure. Journal of Applied Physics, 82 (10). 5217-5226 doi:10.1063/1.366386

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Reference TypeJournal (article/letter/editorial)
TitleA self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure
JournalJournal of Applied Physics
AuthorsCova, P.Author
Singh, A.Author
Masut, R. A.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366386Search in ResearchGate
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Mindat Ref. ID5087376Long-form Identifiermindat:1:5:5087376:0
GUID0
Full ReferenceCova, P., Singh, A., Masut, R. A. (1997) A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure. Journal of Applied Physics, 82 (10). 5217-5226 doi:10.1063/1.366386
Plain TextCova, P., Singh, A., Masut, R. A. (1997) A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure. Journal of Applied Physics, 82 (10). 5217-5226 doi:10.1063/1.366386
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Cova, P., Singh, A., Masut, R. A. (1999) Simultaneous analysis of current–voltage and capacitance–voltage characteristics of metal–insulator–semiconductor diodes with a high mid-gap trap density. Journal of Applied Physics, 85 (9). 6530-6538 doi:10.1063/1.370157
Majkusiak, Bogdan, Strojwas, Andrzej (1993) Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system. Journal of Applied Physics, 74 (9). 5638-5647 doi:10.1063/1.355307
Singh, A., Reinhardt, K. C., Anderson, W. A. (1990) Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions. Journal of Applied Physics, 68 (7). 3475-3483 doi:10.1063/1.346358
DasGupta, A., Arslan, D., Sigurdardottir, A., Hartnagel, H. L. (1998) A novel self-consistent simulator for current-density–voltage characteristics of semiconductor field emitters. Applied Physics Letters, 72 (10). 1220-1222 doi:10.1063/1.121019
Panda, J., Chattopadhyay, S., Nath, T. K. (2013) Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO2/p-Si metal–insulator–semiconductor structure. Journal of Applied Physics, 114 (22). 224508pp. doi:10.1063/1.4848101
Huseynov, Emil, Ismayilov, Namig (2011) Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.1143/jjap.50.05fh02
Huseynov, Emil, Ismayilov, Namig (2011) Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure. Japanese Journal of Applied Physics, 50 (5) 5 doi:10.7567/jjap.50.05fh02
Meriuts, A. V., Gurevich, Yu. G. (2015) Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure. Journal of Applied Physics, 117 (10). 104506pp. doi:10.1063/1.4914458
Nielsen, Otto M. (1983) Influence of semiconductor barrier tunneling on the current‐voltage characteristics of tunnel metal‐oxide‐semiconductor diodes. Journal of Applied Physics, 54 (10). 5880-5886 doi:10.1063/1.331761
Lapushkin, I., Zakharova, A., Gergel, V., Goronkin, H., Tehrani, S. (1997) Self-consistent modeling of the current–voltage characteristics of resonant tunneling structures with type II heterojunctions. Journal of Applied Physics, 82 (5). 2421-2426 doi:10.1063/1.366261
Thurzo, I., Teramura, S., Durny, R., Nádaždy, V., Kumeda, M., Shimizu, T. (1997) Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy. Journal of Applied Physics, 82 (9). 4372-4377 doi:10.1063/1.366247
 
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