Nagahama, S., Yanamoto, T., Sano, M., Mukai, T. (2002) Characteristics of Laser Diodes Composed of GaN-Based Semiconductor. physica status solidi (a), 190 (1). 235-246 doi:10.1002/1521-396x(200203)190:1<235::aid-pssa235>3.0.co;2-y
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Characteristics of Laser Diodes Composed of GaN-Based Semiconductor | ||
Journal | physica status solidi (a) | ||
Authors | Nagahama, S. | Author | |
Yanamoto, T. | Author | ||
Sano, M. | Author | ||
Mukai, T. | Author | ||
Year | 2002 (March) | Volume | 190 |
Issue | 1 | ||
Publisher | Wiley | ||
DOI | doi:10.1002/1521-396x(200203)190:1<235::aid-pssa235>3.0.co;2-ySearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5087648 | Long-form Identifier | mindat:1:5:5087648:4 |
GUID | 0 | ||
Full Reference | Nagahama, S., Yanamoto, T., Sano, M., Mukai, T. (2002) Characteristics of Laser Diodes Composed of GaN-Based Semiconductor. physica status solidi (a), 190 (1). 235-246 doi:10.1002/1521-396x(200203)190:1<235::aid-pssa235>3.0.co;2-y | ||
Plain Text | Nagahama, S., Yanamoto, T., Sano, M., Mukai, T. (2002) Characteristics of Laser Diodes Composed of GaN-Based Semiconductor. physica status solidi (a), 190 (1). 235-246 doi:10.1002/1521-396x(200203)190:13.0.co;2-y | ||
In | (2002, March) physica status solidi (a) Vol. 190 (1) Wiley |
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