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Paskov, P. P., Paskova, T., Holtz, P. O., Monemar, B. (2002) Anisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire. physica status solidi (a), 190 (1). 75-79 doi:10.1002/1521-396x(200203)190:1<75::aid-pssa75>3.0.co;2-z

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Reference TypeJournal (article/letter/editorial)
TitleAnisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire
Journalphysica status solidi (a)
AuthorsPaskov, P. P.Author
Paskova, T.Author
Holtz, P. O.Author
Monemar, B.Author
Year2002 (March)Volume190
Issue1
PublisherWiley
DOIdoi:10.1002/1521-396x(200203)190:1<75::aid-pssa75>3.0.co;2-zSearch in ResearchGate
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Mindat Ref. ID5087681Long-form Identifiermindat:1:5:5087681:9
GUID0
Full ReferencePaskov, P. P., Paskova, T., Holtz, P. O., Monemar, B. (2002) Anisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire. physica status solidi (a), 190 (1). 75-79 doi:10.1002/1521-396x(200203)190:1<75::aid-pssa75>3.0.co;2-z
Plain TextPaskov, P. P., Paskova, T., Holtz, P. O., Monemar, B. (2002) Anisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire. physica status solidi (a), 190 (1). 75-79 doi:10.1002/1521-396x(200203)190:13.0.co;2-z
In(2002, March) physica status solidi (a) Vol. 190 (1) Wiley

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Paskov, P.P., Darakchieva, V., Paskova, T., Holtz, P.O., Monemar, B. (2002) Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire. physica status solidi (b), 234 (3). 892-896 doi:10.1002/1521-3951(200212)234:3<892::aid-pssb892>3.0.co;2-t
Paskov, P. P., Paskova, T., Holtz, P. O., Monemar, B. (2004) Polarized photoluminescence of exciton-polaritons in free-standing GaN. physica status solidi (a), 201 (4). 678-685 doi:10.1002/pssa.200304093
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