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Paskova, T., Paskov, P. P., Valcheva, E., Darakchieva, V., Birch, J., Kasic, A., Arnaudov, B., Tungasmita, S., Monemar, B. (2004) Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices. physica status solidi (a), 201 (10). 2265-2270 doi:10.1002/pssa.200404818

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Reference TypeJournal (article/letter/editorial)
TitlePolar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
Journalphysica status solidi (a)
AuthorsPaskova, T.Author
Paskov, P. P.Author
Valcheva, E.Author
Darakchieva, V.Author
Birch, J.Author
Kasic, A.Author
Arnaudov, B.Author
Tungasmita, S.Author
Monemar, B.Author
Year2004 (August)Volume201
Issue10
PublisherWiley
DOIdoi:10.1002/pssa.200404818Search in ResearchGate
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Mindat Ref. ID5089788Long-form Identifiermindat:1:5:5089788:5
GUID0
Full ReferencePaskova, T., Paskov, P. P., Valcheva, E., Darakchieva, V., Birch, J., Kasic, A., Arnaudov, B., Tungasmita, S., Monemar, B. (2004) Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices. physica status solidi (a), 201 (10). 2265-2270 doi:10.1002/pssa.200404818
Plain TextPaskova, T., Paskov, P. P., Valcheva, E., Darakchieva, V., Birch, J., Kasic, A., Arnaudov, B., Tungasmita, S., Monemar, B. (2004) Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices. physica status solidi (a), 201 (10). 2265-2270 doi:10.1002/pssa.200404818
In(2004, August) physica status solidi (a) Vol. 201 (10) Wiley

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Paskova, T., Darakchieva, V., Paskov, P. P., Birch, J., Valcheva, E., Persson, P. O. �., Arnaudov, B., Tungasmita, S., Monemar, B. (2005) Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties. physica status solidi (c), 2 (7). 2027-2031 doi:10.1002/pssc.200461481
Monemar, B., Paskov, P. P., Haradizadeh, H., Bergman, J. P., Valcheva, E., Darakchieva, V., Arnaudov, B., Paskova, T., Holtz, P. O., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. (2004) Optical investigation of AlGaN/GaN quantum wells and superlattices. physica status solidi (a), 201 (10). 2251-2258 doi:10.1002/pssa.200404849
Paskova, T., Darakchieva, V., Paskov, P.P., Birch, J., Valcheva, E., Persson, P.O.A., Arnaudov, B., Tungasmitta, S., Monemar, B. (2005) Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers. Journal of Crystal Growth, 281 (1). 55-61 doi:10.1016/j.jcrysgro.2005.03.013
Darakchieva, V., Birch, J., Paskov, P.P., Tungasmita, S., Paskova, T., Monemar, B. (2002) Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth. physica status solidi (a), 190 (1). 59-64 doi:10.1002/1521-396x(200203)190:1<59::aid-pssa59>3.0.co;2-f
Paskova, T., Paskov, P.P., Darakchieva, V., Tungasmita, S., Birch, J., Monemar, B. (2001) Defect Reduction in HVPE Growth of GaN and Related Optical Spectra. physica status solidi (a), 183 (1). 197-203 doi:10.1002/1521-396x(200101)183:1<197::aid-pssa197>3.0.co;2-9
Darakchieva, V., Paskova, T., Paskov, P. P., Monemar, B., Ashkenov, N., Schubert, M. (2003) Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers. physica status solidi (a), 195 (3). 516-522 doi:10.1002/pssa.200306145
Paskova, T., Darakchieva, V., Valcheva, E., Paskov, P. P., Monemar, B., Heuken, M. (2003) Growth of GaN ona-plane sapphire: in-plane epitaxial relationships and lattice parameters. physica status solidi (b), 240 (2). 318-321 doi:10.1002/pssb.200303368
Paskov, P. P., Paskova, T., Holtz, P. O., Monemar, B. (2004) Polarized photoluminescence of exciton-polaritons in free-standing GaN. physica status solidi (a), 201 (4). 678-685 doi:10.1002/pssa.200304093
Paskov, P. P., Bergman, J. P., Darakchieva, V., Paskova, T., Monemar, B., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I. (2005) Photoluminescence of GaN/AlN superlattices grown by MOCVD. physica status solidi (c), 2 (7). 2345-2348 doi:10.1002/pssc.200461367
Monemar, B., Haratizadeh, H., Paskov, P. P., Bergman, J. P., Valcheva, E., Arnaudov, B., Kasic, A., Holtz, P. O., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. (2004) Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation. physica status solidi (c), 1 (10). 2500-2503 doi:10.1002/pssc.200404988
Darakchieva, V., Birch, J., Schubert, M., Paskova, T., Tungasmita, S., Wagner, G., Kasic, A., Monemar, B. (2004) Strain-related structural and vibrational properties of thin epitaxialAlNlayers. Physical Review B, 70 (4) doi:10.1103/physrevb.70.045411
 
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