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Kazimirov, A., Scherb, G., Zegenhagen, J., Lee, T.-L., Bedzyk, M. J., Kelly, M. K., Angerer, H., Ambacher, O. (1998) Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves. Journal of Applied Physics, 84 (3). 1703-1705 doi:10.1063/1.368240

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Reference TypeJournal (article/letter/editorial)
TitlePolarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves
JournalJournal of Applied Physics
AuthorsKazimirov, A.Author
Scherb, G.Author
Zegenhagen, J.Author
Lee, T.-L.Author
Bedzyk, M. J.Author
Kelly, M. K.Author
Angerer, H.Author
Ambacher, O.Author
Year1998 (August)Volume84
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.368240Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5092983Long-form Identifiermindat:1:5:5092983:8
GUID0
Full ReferenceKazimirov, A., Scherb, G., Zegenhagen, J., Lee, T.-L., Bedzyk, M. J., Kelly, M. K., Angerer, H., Ambacher, O. (1998) Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves. Journal of Applied Physics, 84 (3). 1703-1705 doi:10.1063/1.368240
Plain TextKazimirov, A., Scherb, G., Zegenhagen, J., Lee, T.-L., Bedzyk, M. J., Kelly, M. K., Angerer, H., Ambacher, O. (1998) Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves. Journal of Applied Physics, 84 (3). 1703-1705 doi:10.1063/1.368240
In(1998, August) Journal of Applied Physics Vol. 84 (3) AIP Publishing

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Scherb, G., Kazimirov, A., Zegenhagen, J., Lee, T. L., Bedzyk, M. J., Noguchi, H., Uosaki, K. (1998) In situx-ray standing-wave analysis of electrodeposited Cu monolayers on GaAs(001) Physical Review B, 58 (16) 10800-10805 doi:10.1103/physrevb.58.10800
Drakopoulos, M, Zegenhagen, J, Lee, T-L, Snigirev, A, Snigireva, I, Cimalla, V, Ambacher, O (2003) GaN polarity domains spatially resolved by x-ray standing wave microscopy. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/344
Bedzyk, M. J., Kazimirov, A., Marasco, D. L., Lee, T.-L., Foster, C. M., Bai, G.-R., Lyman, P. F., Keane, D. T. (2000) Probing the polarity of ferroelectric thin films with x-ray standing waves. Physical Review B, 61 (12) doi:10.1103/physrevb.61.r7873
Kazimirov, A., Faleev, N., Temkin, H., Bedzyk, M. J., Dmitriev, V., Melnik, Yu. (2001) High-resolution x-ray study of thin GaN film on SiC. Journal of Applied Physics, 89 (11). 6092-6097 doi:10.1063/1.1364644
Lee, T.-L., Kumpf, C., Kazimirov, A., Lyman, P. F., Scherb, G., Bedzyk, M. J., Nielsen, M., Feidenhans’l, R., Johnson, R. L., Fimland, B. O., Zegenhagen, J. (2002) Structural analysis of the indium-stabilizedGaAs(001)−c(8×2)surface. Physical Review B, 66 (23) doi:10.1103/physrevb.66.235301
Scherb, G., Kazimirov, A., Zegenhagen, J. (1998) A novel thick-layer electrochemical cell for in situ x-ray diffraction. Review of Scientific Instruments, 69 (2). 512-516 doi:10.1063/1.1148723
Kelly, M. K., Ambacher, O., Dahlheimer, B., Groos, G., Dimitrov, R., Angerer, H., Stutzmann, M. (1996) Optical patterning of GaN films. Applied Physics Letters, 69 (12). 1749-1751 doi:10.1063/1.117473
Marasco, D. L., Kazimirov, A., Bedzyk, M. J., Lee, T.-L., Streiffer, S. K., Auciello, O., Bai, G.-R. (2001) Atomic-scale observation of polarization switching in epitaxial ferroelectric thin films. Applied Physics Letters, 79 (4). 515-517 doi:10.1063/1.1385349
Rouviere, J. L., Weyher, J. L., Seelmann-Eggebert, M., Porowski, S. (1998) Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals. Applied Physics Letters, 73 (5). 668-670 doi:10.1063/1.121942
Scherb, G., Kazimirov, A., Zegenhagen, J., Schultz, T., Feidenhans’l, R., Fimland, B. O. (1997) Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: Anin situx-ray scattering study. Applied Physics Letters, 71 (20). 2990-2992 doi:10.1063/1.120239
Miskys, C. R., Kelly, M. K., Ambacher, O., Martı́nez-Criado, G., Stutzmann, M. (2000) GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates. Applied Physics Letters, 77 (12). 1858pp. doi:10.1063/1.1311596
 
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