Cho, Yong-Hoon, Fedler, F., Hauenstein, R. J., Park, G. H., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. (1999) High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration. Journal of Applied Physics, 85 (5). 3006-3008 doi:10.1063/1.369620
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration | ||
Journal | Journal of Applied Physics | ||
Authors | Cho, Yong-Hoon | Author | |
Fedler, F. | Author | ||
Hauenstein, R. J. | Author | ||
Park, G. H. | Author | ||
Song, J. J. | Author | ||
Keller, S. | Author | ||
Mishra, U. K. | Author | ||
DenBaars, S. P. | Author | ||
Year | 1999 (March) | Volume | 85 |
Issue | 5 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.369620Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5095497 | Long-form Identifier | mindat:1:5:5095497:7 |
GUID | 0 | ||
Full Reference | Cho, Yong-Hoon, Fedler, F., Hauenstein, R. J., Park, G. H., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. (1999) High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration. Journal of Applied Physics, 85 (5). 3006-3008 doi:10.1063/1.369620 | ||
Plain Text | Cho, Yong-Hoon, Fedler, F., Hauenstein, R. J., Park, G. H., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. (1999) High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration. Journal of Applied Physics, 85 (5). 3006-3008 doi:10.1063/1.369620 | ||
In | (1999, March) Journal of Applied Physics Vol. 85 (5) AIP Publishing |
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