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Bernussi, A. A., Carvalho, W., Dias Franco, Margareth K. K. (2001) Effects of ordering and alloy phase separation on the optical emission characteristics of In1−xGaxAsyP1−y layers grown on GaAs substrates. Journal of Applied Physics, 89 (9). 4898-4901 doi:10.1063/1.1360218

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Reference TypeJournal (article/letter/editorial)
TitleEffects of ordering and alloy phase separation on the optical emission characteristics of In1−xGaxAsyP1−y layers grown on GaAs substrates
JournalJournal of Applied Physics
AuthorsBernussi, A. A.Author
Carvalho, W.Author
Dias Franco, Margareth K. K.Author
Year2001 (May)Volume89
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1360218Search in ResearchGate
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Mindat Ref. ID5108833Long-form Identifiermindat:1:5:5108833:2
GUID0
Full ReferenceBernussi, A. A., Carvalho, W., Dias Franco, Margareth K. K. (2001) Effects of ordering and alloy phase separation on the optical emission characteristics of In1−xGaxAsyP1−y layers grown on GaAs substrates. Journal of Applied Physics, 89 (9). 4898-4901 doi:10.1063/1.1360218
Plain TextBernussi, A. A., Carvalho, W., Dias Franco, Margareth K. K. (2001) Effects of ordering and alloy phase separation on the optical emission characteristics of In1−xGaxAsyP1−y layers grown on GaAs substrates. Journal of Applied Physics, 89 (9). 4898-4901 doi:10.1063/1.1360218
In(2001, May) Journal of Applied Physics Vol. 89 (9) AIP Publishing

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Bernussi, A. A., Carvalho, W., Furtado, M. T., Gobbi, A. L. (1999) Photoluminescence microscopy imaging of tensile strained In1−xGaxAsyP1−y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 86 (1). 402-407 doi:10.1063/1.370700
Bhattacharya, Pallab K., Ku, Joseph W. (1985) Effect of alloy clustering on the high‐temperature electron mobility in In1−xGaxAsyP1−y. Journal of Applied Physics, 58 (3). 1410-1411 doi:10.1063/1.336092
Adomi, K., Strite, S., Morkoç, H., Nakamura, Y., Otsuka, N. (1991) Characterization of GaAs grown on Si epitaxial layers on GaAs substrates. Journal of Applied Physics, 69 (1). 220-225 doi:10.1063/1.347754
Yamada, K., Asahi, H., Tampo, H., Imanishi, Y., Ohnishi, K., Asami, K. (2001) Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates. Applied Physics Letters, 78 (19). 2849-2851 doi:10.1063/1.1371528
Maltez, R. L., Ribeiro, E., Bernussi, A. A., Carvalho, W., Gobbi, A. L., Ugarte, D. (2002) Effects of barrier alloy composition and number of stacks in the optical and structural characteristics of strain compensated InxGa1−xAsyP1−y/InzGa1−zAstP1−t/InP multiquantum wells. Journal of Applied Physics, 91 (9). 5915-5922 doi:10.1063/1.1467958
Chu, S. N. G., Nakahara, S., Strege, K. E., Johnston, W. D. (1985) Surface layer spinodal decomposition in In1−xGaxAsyP1−yand In1−xGaxAs grown by hydride transport vapor‐phase epitaxy. Journal of Applied Physics, 57 (10). 4610-4615 doi:10.1063/1.335368
Lee, H. S., Sohn, H. S., Lee, J. Y., Lee, K. H., Kim, Y. H., Kim, T. W., Kwon, M. S., Park, H. L. (2006) Coexistence of a phase separation and an ordered structure in CdxZn1−xTe epilayers grown on GaAs(001) substrates. Journal of Applied Physics, 99 (9). 93512pp. doi:10.1063/1.2195020
Hudait, M. K., Krupanidhi, S. B. (2001) Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 89 (11). 5972-5979 doi:10.1063/1.1368870
Adachi, Sadao (1989) Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y. Journal of Applied Physics, 66 (12). 6030-6040 doi:10.1063/1.343580
Kakimoto, K., Katoda, T. (1982) Raman spectra from Ga1−xInxAs epitaxial layers grown on GaAs and InP substrates. Applied Physics Letters, 40 (9). 826-828 doi:10.1063/1.93281
Adachi, Sadao, Oe, Kunishige (1983) Internal strain and photoelastic effects in Ga1−xAlxAs/GaAs and In1−xGaxAsyP1−y/InP crystals. Journal of Applied Physics, 54 (11). 6620-6627 doi:10.1063/1.331898
 
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