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Hecht, J.-D., Frost, F., Hirsch, D., Neumann, H., Schindler, A., Preobrajenski, A. B., Chassé, T. (2001) Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces. Journal of Applied Physics, 90 (12). 6066-6069 doi:10.1063/1.1415765

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Reference TypeJournal (article/letter/editorial)
TitleInterstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces
JournalJournal of Applied Physics
AuthorsHecht, J.-D.Author
Frost, F.Author
Hirsch, D.Author
Neumann, H.Author
Schindler, A.Author
Preobrajenski, A. B.Author
Chassé, T.Author
Year2001 (December 15)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1415765Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5109546Long-form Identifiermindat:1:5:5109546:6
GUID0
Full ReferenceHecht, J.-D., Frost, F., Hirsch, D., Neumann, H., Schindler, A., Preobrajenski, A. B., Chassé, T. (2001) Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces. Journal of Applied Physics, 90 (12). 6066-6069 doi:10.1063/1.1415765
Plain TextHecht, J.-D., Frost, F., Hirsch, D., Neumann, H., Schindler, A., Preobrajenski, A. B., Chassé, T. (2001) Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces. Journal of Applied Physics, 90 (12). 6066-6069 doi:10.1063/1.1415765
In(2001, December) Journal of Applied Physics Vol. 90 (12) AIP Publishing

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Hecht, J.-D, Frost, F, Chassé, T, Hirsch, D, Neumann, H, Schindler, A, Bigl, F (2001) In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy. Applied Surface Science, 179. 196-202 doi:10.1016/s0169-4332(01)00279-3
CHASSÉ, T., HALLMEIER, K. H., HECHT, J.-D., FROST, F. (2002) X-RAY ABSORPTION NEAR EDGE STRUCTURE INVESTIGATIONS OF GROUP III NITRIDES AND NITRIDED AIII-BV SEMICONDUCTOR SURFACES — FEFF CALCULATIONS AND ELECTRON YIELD MEASUREMENTS. Surface Review and Letters, 9 (1). 381-385 doi:10.1142/s0218625x0200235x
Gerlach, J. W., Ivanov, T., Neumann, L., Höche, Th., Hirsch, D., Rauschenbach, B. (2012) Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets. Journal of Applied Physics, 111 (11). 113521pp. doi:10.1063/1.4728166
Frost, F., Hirsch, D., Schindler, A. (2001) Evaluation of AFM tips using nanometer-sized structures induced by ion sputtering. Applied Surface Science, 179. 8-12 doi:10.1016/s0169-4332(01)00254-9
Frost, F., Lippold, G., Schindler, A., Bigl, F. (1999) Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy. Journal of Applied Physics, 85 (12). 8378-8385 doi:10.1063/1.370685
Sidorenko, A., Peisert, H., Neumann, H., Chassé, T. (2006) GaN nucleation on (0001)-sapphire via ion-induced nitridation of gallium. Applied Surface Science, 252. 7671-7677 doi:10.1016/j.apsusc.2006.03.053
Schubert, E., Razek, N., Frost, F., Schindler, A., Rauschenbach, B. (2005) GaAs surface cleaning by low-energy hydrogen ion bombardment at moderate temperatures. Journal of Applied Physics, 97 (2). 23511pp. doi:10.1063/1.1836858
Ziberi, B., Frost, F., Rauschenbach, B. (2006) Pattern transitions on Ge surfaces during low-energy ion beam erosion. Applied Physics Letters, 88 (17). 173115pp. doi:10.1063/1.2199488
Ziberi, B., Frost, F., Rauschenbach, B., Höche, Th. (2005) Highly ordered self-organized dot patterns on Si surfaces by low-energy ion-beam erosion. Applied Physics Letters, 87 (3). 33113pp. doi:10.1063/1.2000342
Flamm, D., Frost, F., Hirsch, D. (2001) Evolution of surface topography of fused silica by ion beam sputtering. Applied Surface Science, 179. 95-101 doi:10.1016/s0169-4332(01)00269-0
Franke, E., Schubert, M., Woollam, J. A., Hecht, J.-D., Wagner, G., Neumann, H., Bigl, F. (2000) In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films. Journal of Applied Physics, 87 (5). 2593-2599 doi:10.1063/1.372224
 
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