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Kroon, M. A., van Swaaij, R. A. C. M. M. (2001) Spatial effects on ideality factor of amorphous siliconpindiodes. Journal of Applied Physics, 90 (2). 994-1000 doi:10.1063/1.1379560

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Reference TypeJournal (article/letter/editorial)
TitleSpatial effects on ideality factor of amorphous siliconpindiodes
JournalJournal of Applied Physics
AuthorsKroon, M. A.Author
van Swaaij, R. A. C. M. M.Author
Year2001 (July 15)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1379560Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5109743Long-form Identifiermindat:1:5:5109743:7
GUID0
Full ReferenceKroon, M. A., van Swaaij, R. A. C. M. M. (2001) Spatial effects on ideality factor of amorphous siliconpindiodes. Journal of Applied Physics, 90 (2). 994-1000 doi:10.1063/1.1379560
Plain TextKroon, M. A., van Swaaij, R. A. C. M. M. (2001) Spatial effects on ideality factor of amorphous siliconpindiodes. Journal of Applied Physics, 90 (2). 994-1000 doi:10.1063/1.1379560
In(2001, July) Journal of Applied Physics Vol. 90 (2) AIP Publishing

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Kind, R., van Swaaij, R. A. C. M. M., Rubinelli, F. A., Solntsev, S., Zeman, M. (2011) Thermal ideality factor of hydrogenated amorphous siliconp-i-nsolar cells. Journal of Applied Physics, 110 (10). 104512pp. doi:10.1063/1.3662924
Kroon, M. A., van Swaaij, R. A. C. M. M., Zeman, M., Kuznetsov, V. I., Metselaar, J. W. (1998) Hydrogenated amorphous silicon transverse junction solar cell. Applied Physics Letters, 72 (2). 209-210 doi:10.1063/1.120687
Wank, M. A., van Swaaij, R. A. C. M. M., van de Sanden, M. C. M. (2009) On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates. Applied Physics Letters, 95 (2). 21503pp. doi:10.1063/1.3179151
van Swaaij, R. A. C. M. M., Annis, A. D., Sealy, B. J., Shannon, J. M. (1997) Electronic effects of ion damage in hydrogenated amorphous silicon alloys. Journal of Applied Physics, 82 (10). 4800-4804 doi:10.1063/1.366338
Wank, M. A., van Swaaij, R. A. C. M. M., Kudlacek, P., van de Sanden, M. C. M., Zeman, M. (2010) Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing. Journal of Applied Physics, 108 (10). 103304pp. doi:10.1063/1.3505794
Klaver, A., Nádaždy, V., Zeman, M., van Swaaij, R. A. C. M. M. (2006) Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon. Applied Physics Letters, 89 (2). 22119pp. doi:10.1063/1.2221876
Khan, R. U. A., Silva, S. R. P., van Swaaij, R. A. C. M. M. (2003) Polymeric amorphous carbon as p-type window within amorphous silicon solar cells. Applied Physics Letters, 82 (22). 3979-3981 doi:10.1063/1.1580636
Yang, Guangtao, van Swaaij, R. A. C. M. M., Dobrovolskiy, S., Zeman, M. (2014) Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement. Journal of Applied Physics, 115 (3). 34512pp. doi:10.1063/1.4862308
Smit, C., Swaaij, R. A. C. M. M. van, Hamers, E. A. G., Sanden, M. C. M. van de (2004) The role of the silyl radical in plasma deposition of microcrystalline silicon. Journal of Applied Physics, 96 (8). 4076-4083 doi:10.1063/1.1790577
van Sebille, M, Vasudevan, R A, Lancee, R J, van Swaaij, R A C M M, Zeman, M (2015) Optical characterization and density of states determination of silicon nanocrystals embedded in amorphous silicon based matrix. Journal of Physics D: Applied Physics, 48. 325302pp. doi:10.1088/0022-3727/48/32/325302
Smit, C., van Swaaij, R. A. C. M. M., Donker, H., Petit, A. M. H. N., Kessels, W. M. M., van de Sanden, M. C. M. (2003) Determining the material structure of microcrystalline silicon from Raman spectra. Journal of Applied Physics, 94 (5). 3582-3588 doi:10.1063/1.1596364
 
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