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Baeri, P., Malvezzi, A. M., Reitano, R. (2001) Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological model. Journal of Applied Physics, 90 (2). 682-688 doi:10.1063/1.1380988

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological model
JournalJournal of Applied Physics
AuthorsBaeri, P.Author
Malvezzi, A. M.Author
Reitano, R.Author
Year2001 (July 15)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1380988Search in ResearchGate
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Mindat Ref. ID5109780Long-form Identifiermindat:1:5:5109780:8
GUID0
Full ReferenceBaeri, P., Malvezzi, A. M., Reitano, R. (2001) Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological model. Journal of Applied Physics, 90 (2). 682-688 doi:10.1063/1.1380988
Plain TextBaeri, P., Malvezzi, A. M., Reitano, R. (2001) Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65:H alloys: A phenomenological model. Journal of Applied Physics, 90 (2). 682-688 doi:10.1063/1.1380988
In(2001, July) Journal of Applied Physics Vol. 90 (2) AIP Publishing

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Baeri, A., Reitano, R., Malvezzi, A.M., Arena, C. (2000) Time resolved photoluminescence in keV proton irradiated a-SiC:H alloys. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 166. 426-430 doi:10.1016/s0168-583x(99)01215-x
Baeri, P., Reitano, R., Malvezzi, A. M., Borghesi, A. (1990) Pulsed laser melting of Siā€As supersaturated solid solutions. Journal of Applied Physics, 67 (4). 1801-1804 doi:10.1063/1.345606
Reitano, R., Baeri, A., Musumeci, P. (2001) Particle and light-induced luminescence degradation in a-SiC:H. Applied Surface Science, 184. 190-193 doi:10.1016/s0169-4332(01)00501-3
Catchings III, R. M., Borg, R. J., Violet, C. E. (1985) ac susceptibility of thermally annealed and neutron irradiated Cuā€Ni alloys. Journal of Applied Physics, 57 (8). 3435-3437 doi:10.1063/1.335068
Reitano, R, Musumeci, P, Baeri, P, Foti, G (1999) Luminescence quenching in 150 keV proton irradiated a-SiC:H. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 148 (1). 578-582 doi:10.1016/s0168-583x(98)00713-7
Reitano, R., Grimaldi, M. G., Baeri, P., Bellandi, E., Borghesi, S., Baratta, G. (1993) Transition from relaxed to derelaxed amorphous silicon: Optical characterization. Journal of Applied Physics, 74 (4). 2850-2855 doi:10.1063/1.354637
Snyman, H. C., Neethling, J. H. (1981) Photoluminescence of protonā€bombarded and annealed GaAs. Journal of Applied Physics, 52 (11). 6637-6640 doi:10.1063/1.328432
Olego, D. J., Serreze, H. B. (1985) Photoluminescence and Raman scattering investigations of implanted and thermally annealed InP. Journal of Applied Physics, 58 (5). 1979-1981 doi:10.1063/1.336005
Campisano, S. U., Baeri, P., Rimini, E., Malvezzi, A. M., Russo, G. (1982) Impurity redistribution in Biā€implanted Si after nanosecond and picosecond Nd laser pulse irradiation. Applied Physics Letters, 41 (5). 456-458 doi:10.1063/1.93570
Wen, Xiaoming, Davis, Jeffrey A., Van Dao, Lap, Hannaford, Peter, Coleman, V. A., Tan, H. H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., Yano, M. (2007) Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOāˆ•ZnMgO multiple quantum wells. Applied Physics Letters, 90 (22). 221914pp. doi:10.1063/1.2745264
Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, James S. (2005) Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11āˆ•GaAs single quantum wells. Journal of Applied Physics, 98 (6). 63527pp. doi:10.1063/1.2060940
 
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