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Coelho, J., Patriarche, G., Glas, F., Sagnes, I., Saint-Girons, G. (2005) Stress-engineered orderings of self-assembled III-V semiconductor nanostructures. physica status solidi (c), 2 (4). 1245-1250 doi:10.1002/pssc.200460413

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Reference TypeJournal (article/letter/editorial)
TitleStress-engineered orderings of self-assembled III-V semiconductor nanostructures
Journalphysica status solidi (c)
AuthorsCoelho, J.Author
Patriarche, G.Author
Glas, F.Author
Sagnes, I.Author
Saint-Girons, G.Author
Year2005 (March)Volume2
Issue4
PublisherWiley
DOIdoi:10.1002/pssc.200460413Search in ResearchGate
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Mindat Ref. ID5109912Long-form Identifiermindat:1:5:5109912:5
GUID0
Full ReferenceCoelho, J., Patriarche, G., Glas, F., Sagnes, I., Saint-Girons, G. (2005) Stress-engineered orderings of self-assembled III-V semiconductor nanostructures. physica status solidi (c), 2 (4). 1245-1250 doi:10.1002/pssc.200460413
Plain TextCoelho, J., Patriarche, G., Glas, F., Sagnes, I., Saint-Girons, G. (2005) Stress-engineered orderings of self-assembled III-V semiconductor nanostructures. physica status solidi (c), 2 (4). 1245-1250 doi:10.1002/pssc.200460413
In(2005, March) physica status solidi (c) Vol. 2 (4) Wiley

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Coelho, J., Patriarche, G., Glas, F., Sagnes, I., Saint-Girons, G. (2005) Dislocation networks adapted to order the growth of III-V semiconductor nanostructures. physica status solidi (c), 2 (6). 1933-1937 doi:10.1002/pssc.200460528
Coelho, J., Patriarche, G., Glas, F., Saint-Girons, G., Sagnes, I. (2005) Stress-driven self-ordering of III–V nanostructures. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.359
Coelho, J, Patriarche, G, Glas, F, Saint-Girons, G, Sagnes, I (2004) Long-range ordering of III–V semiconductor nanostructures by shallowly buried dislocation networks. Journal of Physics: Condensed Matter, 16 (45). 7941-7946 doi:10.1088/0953-8984/16/45/016
Glas, F., Coelho, J., Patriarche, G., Saint-Girons, G. (2005) Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.219
Coelho, José, Patriarche, Gilles, Glas, Frank, Saint-Girons, Guillaume, Sagnes, Isabelle, Largeau, Ludovic (2004) Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures. Physical Review B, 70 (15) doi:10.1103/physrevb.70.155329
Michon, A., Patriarche, G., Sagnes, I., Beaudoin, G., Saint-Girons, G. (2006) InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process. physica status solidi (c), 3 (11). 3928-3931 doi:10.1002/pssc.200671539
El kurdi, M., Boucaud, P., Sauvage, S., Aniel, F., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Saint-Girons, G., Sagnes, I., Patriarche, G. (2005) Electroabsorption spectroscopy of Ge∕Si self-assembled islands. Journal of Applied Physics, 97 (8). 83525pp. doi:10.1063/1.1874296
El kurdi, M., Boucaud, P., Sauvage, S., Fishman, G., Kermarrec, O., Campidelli, Y., Bensahel, D., Saint-Girons, G., Sagnes, I., Patriarche, G. (2002) Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands. Journal of Applied Physics, 92 (4). 1858-1861 doi:10.1063/1.1493656
Ferguson, I. T. (2007) Dilute magnetic bulk GaN semiconductor and nanostructures. physica status solidi (c), 4 (2). 389-396 doi:10.1002/pssc.200673218
Baribeau, J.-M., Wu, X. (2009) Advances in self-assembled SiGe islands and nanostructures. physica status solidi (c), 6. doi:10.1002/pssc.200881273
Monte, A. F. G., Morais, P. C., Qu, Fanyao, Hopkinson, M. (2005) Capacitance-voltage measurements in InAs-GaAs self-assembled quantum dots. physica status solidi (c), 2 (8). 3163-3166 doi:10.1002/pssc.200460777
 
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