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Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T. G., Dupuis, R. D. (2001) Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 90 (4). 1817-1822 doi:10.1063/1.1330767

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Reference TypeJournal (article/letter/editorial)
TitleOptical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition
JournalJournal of Applied Physics
AuthorsKwon, Ho KiAuthor
Eiting, C. J.Author
Lambert, D. J. H.Author
Shelton, B. S.Author
Wong, M. M.Author
Zhu, T. G.Author
Dupuis, R. D.Author
Year2001 (August 15)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1330767Search in ResearchGate
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Mindat Ref. ID5110005Long-form Identifiermindat:1:5:5110005:0
GUID0
Full ReferenceKwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T. G., Dupuis, R. D. (2001) Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 90 (4). 1817-1822 doi:10.1063/1.1330767
Plain TextKwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T. G., Dupuis, R. D. (2001) Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 90 (4). 1817-1822 doi:10.1063/1.1330767
In(2001, August) Journal of Applied Physics Vol. 90 (4) AIP Publishing

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Kwon, Ho Ki, Eiting, C.J, Lambert, D.J.H, Shelton, B.S, Wong, M.M, Zhu, T.G, Dupuis, R.D (2000) Optical properties of undoped and modulation-doped AlxGa1−xN/GaN heterostructures grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 221 (1). 362-367 doi:10.1016/s0022-0248(00)00714-4
Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T.-G., Dupuis, R. D. (1999) Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure. Applied Physics Letters, 75 (18). 2788-2790 doi:10.1063/1.125150
Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Wong, M. M., Dupuis, R. D., Liliental-Weber, Z., Benamara, M. (2000) Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 77 (16). 2503-2505 doi:10.1063/1.1318396
Grudowski, P. A., Eiting, C. J., Park, J., Shelton, B. S., Lambert, D. J. H., Dupuis, R. D. (1997) Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition. Applied Physics Letters, 71 (11). 1537-1539 doi:10.1063/1.119959
Eiting, C.J., Lambert, D.J.H., Kwon, H.K., Shelton, B.S., Wong, M.M., Zhu, T.G., Dupuis, R.D. (1999) Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition. physica status solidi (b), 216 (1). 193-197 doi:10.1002/(sici)1521-3951(199911)216:1<193::aid-pssb193>3.0.co;2-k
Ki Kwon, Ho, Eiting, C.J, Lambert, D.J.H, Wong, M.M, Shelton, B.S, Zhu, T.G, Liliental-Weber, Z, Benamura, M, Dupuis, R.D (2000) Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 221 (1). 240-245 doi:10.1016/s0022-0248(00)00692-8
Lambert, D. J. H., Wong, M. M., Chowdhury, U., Collins, C., Li, T., Kwon, H. K., Shelton, B. S., Zhu, T. G., Campbell, J. C., Dupuis, R. D. (2000) Back illuminated AlGaN solar-blind photodetectors. Applied Physics Letters, 77 (12). 1900pp. doi:10.1063/1.1311821
Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., Park, J., Shelton, B. S., Lambert, D. J. H. (1997) Optical data storage in InGaN/GaN heterostructures. Applied Physics Letters, 71 (10). 1382-1384 doi:10.1063/1.119900
Shelton, B. S., Wong, M. M., Zhu, T.-G., Eiting, C. J., Lambert, D. J. H., Lin, D. E., Dupuis, R. D. (1999) Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs. physica status solidi (a), 176 (1). 213-217 doi:10.1002/(sici)1521-396x(199911)176:1<213::aid-pssa213>3.0.co;2-9
Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Lambert, D. J. H., Eiting, C. J., Dupuis, R. D. (1999) Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition. Applied Physics Letters, 75 (26). 4159-4161 doi:10.1063/1.125568
Zhu, T. G., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Chowdhury, U., Dupuis, R. D. (2000) High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching. Applied Physics Letters, 77 (18). 2918-2920 doi:10.1063/1.1322050
 
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