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Badylevich, M. V., Kveder, V. V., Orlov, V. I., Ossipyan, Yu. A. (2005) Spin-resonant change of unlocking stress for dislocations in silicon. physica status solidi (c), 2 (6). 1869-1872 doi:10.1002/pssc.200460534

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Reference TypeJournal (article/letter/editorial)
TitleSpin-resonant change of unlocking stress for dislocations in silicon
Journalphysica status solidi (c)
AuthorsBadylevich, M. V.Author
Kveder, V. V.Author
Orlov, V. I.Author
Ossipyan, Yu. A.Author
Year2005 (April)Volume2
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200460534Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5110123Long-form Identifiermindat:1:5:5110123:5
GUID0
Full ReferenceBadylevich, M. V., Kveder, V. V., Orlov, V. I., Ossipyan, Yu. A. (2005) Spin-resonant change of unlocking stress for dislocations in silicon. physica status solidi (c), 2 (6). 1869-1872 doi:10.1002/pssc.200460534
Plain TextBadylevich, M. V., Kveder, V. V., Orlov, V. I., Ossipyan, Yu. A. (2005) Spin-resonant change of unlocking stress for dislocations in silicon. physica status solidi (c), 2 (6). 1869-1872 doi:10.1002/pssc.200460534
In(2005, April) physica status solidi (c) Vol. 2 (6) Wiley

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Voß, O., Kveder, V. V., Schröter, W., Seibt, M. (2005) Electrical properties of gold at dislocations in silicon. physica status solidi (c), 2 (6). 1847-1851 doi:10.1002/pssc.200460516
Badylevich, M. V., Iunin, Yu. L., Kveder, V. V., Orlov, V. I., Osip’yan, Yu. A. (2003) Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon. Journal of Experimental and Theoretical Physics, 97 (3). 601-605 doi:10.1134/1.1618345
Kveder, V. V., Labusch, R., Ossipyan, Yu. A. (1984) The exodiffusion of hydrogen in dislocated crystalline silicon. physica status solidi (a), 84 (1). 149-156 doi:10.1002/pssa.2210840118
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Mezhennyi, M. V., Milvidskii, M. G., Reznik, V. Ya., Falster, R. J. (2005) Generation of dislocations in annealed silicon wafers under applied stress. physica status solidi (c), 2 (6). 1968-1972 doi:10.1002/pssc.200460538
Wattenbach, M., Kisielowski-Kemmerich, C., Alexander, H., Kveder, V. V., McHedlidze, T. R., Osipyan, Yu. A. (1990) Electric-Dipole Spin Resonance of Dislocations in Plastically Deformed p-Type Silicon. physica status solidi (b), 158 (1). doi:10.1002/pssb.2221580150
Kveder, V. V., Osipyan, Yu. A., Schröter, W., Zoth, G. (1982) On the Energy Spectrum of Dislocations in Silicon. physica status solidi (a), 72 (2). 701-713 doi:10.1002/pssa.2210720233
Kveder, V., Badylevich, M., Schröter, W., Seibt, M., Steinman, E., Izotov, A. (2005) Silicon light-emitting diodes based on dislocation-related luminescence. physica status solidi (a), 202 (5). 901-910 doi:10.1002/pssa.200460512
Kveder, V. V., Labusch, R., Ossipyan, Yu. A. (1985) Frequency dependence of the dislocation conduction in Ge and Si. physica status solidi (a), 92 (1). 293-302 doi:10.1002/pssa.2210920130
Grazhulis, V. A., Kveder, V. V., Osipyan, Yu. A. (1981) Investigation of the Dislocation Spin System in Silicon as Model of One-Dimensional Spin Chains. physica status solidi (b), 103 (2). 519-528 doi:10.1002/pssb.2221030208
Shashkin, V. I., Vostokov, N. V., Vopilkin, E. A., Klimov, A. Yu., Daniltsev, V. M., Rogov, V. V., Lazarev, S. G. (2005) Fabrication and characterization of stress-free microbeams for MEMS applications. physica status solidi (c), 2 (4). 1433-1437 doi:10.1002/pssc.200460481
 
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