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Zhou, L., Chee, Y. H., Karunasiri, G. (2001) Measurement of the excited-state position of bound-to-bound quantum-well infrared detectors. Journal of Applied Physics, 90 (4). 2045-2047 doi:10.1063/1.1388575

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Reference TypeJournal (article/letter/editorial)
TitleMeasurement of the excited-state position of bound-to-bound quantum-well infrared detectors
JournalJournal of Applied Physics
AuthorsZhou, L.Author
Chee, Y. H.Author
Karunasiri, G.Author
Year2001 (August 15)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1388575Search in ResearchGate
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Mindat Ref. ID5110129Long-form Identifiermindat:1:5:5110129:9
GUID0
Full ReferenceZhou, L., Chee, Y. H., Karunasiri, G. (2001) Measurement of the excited-state position of bound-to-bound quantum-well infrared detectors. Journal of Applied Physics, 90 (4). 2045-2047 doi:10.1063/1.1388575
Plain TextZhou, L., Chee, Y. H., Karunasiri, G. (2001) Measurement of the excited-state position of bound-to-bound quantum-well infrared detectors. Journal of Applied Physics, 90 (4). 2045-2047 doi:10.1063/1.1388575
In(2001, August) Journal of Applied Physics Vol. 90 (4) AIP Publishing

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Cheah, C. W., Karunasiri, G., Tan, L. S., Zhou, L. F. (2002) Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors. Applied Physics Letters, 80 (1). 145-147 doi:10.1063/1.1431395
Karunasiri, Gamani (1996) Thermionic emission and tunneling in InGaAs/GaAs quantum well infrared detectors. Journal of Applied Physics, 79 (10). 8121-8123 doi:10.1063/1.362372
Hasnain, G., Levine, B. F., Sivco, D. L., Cho, A. Y. (1990) Mid‐infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures. Applied Physics Letters, 56 (8). 770-772 doi:10.1063/1.103186
Steele, A. G., Liu, H. C., Buchanan, M., Wasilewski, Z. R. (1991) Importance of the upper state position in the performance of quantum well intersubband infrared detectors. Applied Physics Letters, 59 (27). 3625-3627 doi:10.1063/1.106379
Wu, W. G., Chang, K., Jiang, D. S., Li, Y. X., Zheng, H. Z., Liu, H. C. (2001) InxGa1−xAs/AlyGa1−yAs/AlzGa1−zAs asymmetric step quantum-well middle wavelength infrared detectors. Journal of Applied Physics, 90 (7). 3437-3441 doi:10.1063/1.1391414
Karunasiri, R. P. G., Park, J. S., Wang, K. L. (1991) Si1−xGex/Si multiple quantum well infrared detector. Applied Physics Letters, 59 (20). 2588-2590 doi:10.1063/1.105911
Li, H., Mei, T., Lantz, K. P., Karunasiri, G. (2004) Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy. Journal of Applied Physics, 96 (11). 6799-6802 doi:10.1063/1.1810203
Wang, Daniel C., Bosman, Gijs, Wang, Yeng H., Li, Sheng S. (1995) Noise performance of bound‐to‐miniband transition III‐V quantum‐well infrared photodetectors. Journal of Applied Physics, 77 (3). 1107-1112 doi:10.1063/1.358972
Lee, G. S., Hsieh, K. Y., Kolbas, R. M. (1987) Negative differential resistance in a strained‐layer quantum‐well structure with a bound state. Journal of Applied Physics, 62 (8). 3453-3456 doi:10.1063/1.339315
Jolley, G., Faraone, L., Fu, L., Lu, H. F., Tan, H. H., Jagadish, C. (2013) A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination. Applied Physics Letters, 102 (21). 213903pp. doi:10.1063/1.4807506
Levine, B. F., Bethea, C. G., Choi, K. K., Walker, J., Malik, R. J. (1988) Bound‐to‐extended state absorption GaAs superlattice transport infrared detectors. Journal of Applied Physics, 64 (3). 1591-1593 doi:10.1063/1.341794
 
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