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(2001, September) Journal of Applied Physics Vol. 90 (5) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year2001 (September)Volume90
Issue<   5   >
PublisherAIP Publishing
Mindat Ref. ID5110140Long-form Identifiermindat:1:5:5110140:2
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Full Reference(2001, September) Journal of Applied Physics Vol. 90 (5) AIP Publishing
Plain Text(2001, September) Journal of Applied Physics Vol. 90 (5) AIP Publishing
In(2001) Journal of Applied Physics Vol. 90. AIP Publishing

Contains

Green, M. L., Gusev, E. P., Degraeve, R., Garfunkel, E. L. (2001) Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits. Journal of Applied Physics, 90 (5). 2057-2121 doi:10.1063/1.1385803
Nakamura, H., Crain, J., Sekiya, K. (2001) Optimized active-matrix drives for liquid crystal displays. Journal of Applied Physics, 90 (5). 2122-2127 doi:10.1063/1.1389078
Lee, Tae-Woo, Park, O Ok, Do, Lee-Mi, Zyung, Taehyoung, Ahn, Taek, Shim, Hong-Ku (2001) Polymer light-emitting devices using ionomers as an electron injecting and hole blocking layer. Journal of Applied Physics, 90 (5). 2128-2134 doi:10.1063/1.1391215
Zheng, Y. W., Luk’yanchuk, B. S., Lu, Y. F., Song, W. D., Mai, Z. H. (2001) Dry laser cleaning of particles from solid substrates: Experiments and theory. Journal of Applied Physics, 90 (5). 2135-2142 doi:10.1063/1.1389477
Zhu, G., Chen, H., Dutta, N. (2001) Time domain analysis of a rational harmonic mode locked ring fiber laser. Journal of Applied Physics, 90 (5). 2143-2147 doi:10.1063/1.1390304
Hash, D. B., Bose, D., Rao, M. V. V. S., Cruden, B. A., Meyyappan, M., Sharma, S. P. (2001) Impact of gas heating in inductively coupled plasmas. Journal of Applied Physics, 90 (5). 2148-2157 doi:10.1063/1.1390503
Bowden, M. D., Tabata, R., Suanpoot, P., Uchino, K., Muraoka, K., Noguchi, M. (2001) Measurements of the electron energy distribution function in an Ar/CF4 inductively coupled plasma. Journal of Applied Physics, 90 (5). 2158-2161 doi:10.1063/1.1398775
Burm, K. T. A. L., Goedheer, W. J., Schram, D. C. (2001) Plasma expansion in the preshock region. Journal of Applied Physics, 90 (5). 2162-2168 doi:10.1063/1.1390309
Kratzer, Matthias, Brinkmann, Ralf Peter, Sabisch, Winfried, Schmidt, Harald (2001) Hybrid model for the calculation of ion distribution functions behind a direct current or radio frequency driven plasma boundary sheath. Journal of Applied Physics, 90 (5). 2169-2179 doi:10.1063/1.1389081
Fujii, Toshihiro, Nakamura, Megumi (2001) On-line monitoring of perfluoro compounds in exhaust gases during semiconductor manufacture: Use of Li+ ion attachment mass spectrometry. Journal of Applied Physics, 90 (5). 2180-2184 doi:10.1063/1.1384857
Baukol, B. A., Hitt, J. C., Wager, J. F., Sun, S.-S. (2001) Electroluminescence thermal quenching in alternating-current thin-film electroluminescent devices. Journal of Applied Physics, 90 (5). 2185-2190 doi:10.1063/1.1385570
Kim, C. C., Je, J. H., Yi, M. S., Noh, D. Y., Ruterana, P. (2001) In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001). Journal of Applied Physics, 90 (5). 2191-2194 doi:10.1063/1.1388859
Lee, C. G., Takeda, Y., Kishimoto, N., Umeda, N. (2001) Surface morphology and structural changes in insulators induced by high-current 60 keV Cu− implantation. Journal of Applied Physics, 90 (5). 2195-2199 doi:10.1063/1.1388599
Hayakawa, Tomokatsu, Nogami, Masayuki (2001) Energy migration of the local excitation at the Eu3+ site in a Eu–O chemical cluster in sol-gel derived SiO2:Eu3+ glasses. Journal of Applied Physics, 90 (5). 2200-2205 doi:10.1063/1.1384491
Nordman, Nina, Nordman, Olli (2001) Refractive index change caused by electron irradiation in amorphous As–S and As–Se thin films coated with different metals. Journal of Applied Physics, 90 (5). 2206-2210 doi:10.1063/1.1388862
Kim, Mu-Gyeom, Shin, Sung-Chul (2001) Temperature dependence of growth morphology of sputtered (FePt/Pt) films on MgO (100) substrate. Journal of Applied Physics, 90 (5). 2211-2215 doi:10.1063/1.1389527
Kato, Hiromitsu, Masuzawa, Akira, Sato, Hidefumi, Noma, Takashi, Seol, Kwang Soo, Fujimaki, Makoto, Ohki, Yoshimichi (2001) Visible electroluminescence in hydrogenated amorphous silicon oxynitride. Journal of Applied Physics, 90 (5). 2216-2220 doi:10.1063/1.1388864
Greeff, C. W., Trinkle, D. R., Albers, R. C. (2001) Shock-induced α–ω transition in titanium. Journal of Applied Physics, 90 (5). 2221-2226 doi:10.1063/1.1389334
Yu, K. M., Walukiewicz, W., Wu, J., Beeman, J. W., Ager, J. W., Haller, E. E., Shan, W., Xin, H. P., Tu, C. W., Ridgway, M. C. (2001) Formation of diluted III–V nitride thin films by N ion implantation. Journal of Applied Physics, 90 (5). 2227-2234 doi:10.1063/1.1388860
van de Krol, Roel, Goossens, Albert, Meulenkamp, Eric A. (2001) Electrical and optical properties of TiO2 in accumulation and of lithium titanate Li0.5TiO2. Journal of Applied Physics, 90 (5). 2235-2242 doi:10.1063/1.1388165
Krasnov, Alex N., Hofstra, Peter G. (2001) Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices. Journal of Applied Physics, 90 (5). 2243-2246 doi:10.1063/1.1391219
Wang, Yuren, Kakimoto, Koichi (2001) Heating rate dependence of melting of silicon: Anin situx-ray topography study. Journal of Applied Physics, 90 (5). 2247-2251 doi:10.1063/1.1389481
Thor, E., MĂŒhlberger, M., Palmetshofer, L., SchĂ€ffler, F. (2001) Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures. Journal of Applied Physics, 90 (5). 2252-2256 doi:10.1063/1.1389762
Ishizaka, T., Kurokawa, Y. (2001) Creation of long lasting luminescence in transparent aluminas. Journal of Applied Physics, 90 (5). 2257-2261 doi:10.1063/1.1391221
Luo, Weiwei, Yang, Shenzhi, Clancy, Paulette, Thompson, Michael O. (2001) Deactivation kinetics of supersaturated boron:silicon alloys. Journal of Applied Physics, 90 (5). 2262-2268 doi:10.1063/1.1385360
Kuskovsky, Igor L., Tian, C., Sudbrack, C., Neumark, G. F., Lin, W.-C., Guo, S. P., Tamargo, M. C. (2001) Photoluminescence of ÎŽ-doped ZnSe:(Te,N) grown by molecular beam epitaxy. Journal of Applied Physics, 90 (5). 2269-2272 doi:10.1063/1.1389483
Balderas-LĂłpez, J. A., Mandelis, A. (2001) Thermal diffusivity measurements in the photoacoustic open-cell configuration using simple signal normalization techniques. Journal of Applied Physics, 90 (5). 2273-2279 doi:10.1063/1.1391224
Martini, S., Quivy, A. A., Tabata, A., Leite, J. R. (2001) Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90 (5). 2280-2289 doi:10.1063/1.1389336
Lee, Hosun, Kim, S. M., Park, Y. J., Kim, E. K. (2001) Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation. Journal of Applied Physics, 90 (5). 2290-2295 doi:10.1063/1.1391413
Singh, Anil K., Balasingh, Chellayyan (2001) X-ray diffraction line broadening under elastic deformation of a polycrystalline sample: An elastic-anisotropy effect. Journal of Applied Physics, 90 (5). 2296-2302 doi:10.1063/1.1388571
Devanathan, R., Weber, W. J., Gao, F. (2001) Atomic scale simulation of defect production in irradiated 3C-SiC. Journal of Applied Physics, 90 (5). 2303-2309 doi:10.1063/1.1389523
Dittrich, Th., Timoshenko, V. Yu., Rappich, J., Tsybeskov, L. (2001) Room temperature electroluminescence from a c-Si p-i-n structure. Journal of Applied Physics, 90 (5). 2310-2313 doi:10.1063/1.1390310
Wang, S. Z., Yoon, S. F., He, L., Shen, X. C. (2001) Physical mechanisms of photoluminescence of chlorine-doped ZnSe epilayers grown by molecular beam epitaxy. Journal of Applied Physics, 90 (5). 2314-2320 doi:10.1063/1.1391213
Zanatta, A. R., Ribeiro, C. T. M., Freire, F. L. (2001) Optoelectronic and structural properties of Er-doped sputter-deposited gallium–arsenic–nitrogen films. Journal of Applied Physics, 90 (5). 2321-2328 doi:10.1063/1.1388568
Jacob, A. P., Zhao, Q. X., Willander, M., Baron, T., Magnea, N. (2001) Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum well structures. Journal of Applied Physics, 90 (5). 2329-2332 doi:10.1063/1.1388569
Corella-Madueño, A., Rosas, R., Marı́n, J. L., Riera, R. (2001) Hydrogenic impurities in spherical quantum dots in a magnetic field. Journal of Applied Physics, 90 (5). 2333-2337 doi:10.1063/1.1329143
Vogel, Eric M., Edelstein, Monica D., Suehle, John S. (2001) Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection. Journal of Applied Physics, 90 (5). 2338-2346 doi:10.1063/1.1389528
Markovich, V., Rozenberg, E., Gorodetsky, G., Mogilyansky, D., Revzin, B., Pelleg, J. (2001) Pressure effect on magnetic and transport properties of Zn doped La0.91Mn0.95O3 manganite. Journal of Applied Physics, 90 (5). 2347-2351 doi:10.1063/1.1390303
Arkhipov, V. I., Emelianova, E. V., BĂ€ssler, H. (2001) Charge carrier transport and recombination at the interface between disordered organic dielectrics. Journal of Applied Physics, 90 (5). 2352-2357 doi:10.1063/1.1388566
Takayama, Toru, Yuri, Masaaki, Itoh, Kunio, Harris, James S. (2001) Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model. Journal of Applied Physics, 90 (5). 2358-2369 doi:10.1063/1.1388170
Sandomirsky, V., Butenko, A. V., Levin, R., Schlesinger, Y. (2001) Electric-field-effect thermoelectrics. Journal of Applied Physics, 90 (5). 2370-2379 doi:10.1063/1.1389074
Åberg, J., Persson, S., Hellberg, P.-E., Zhang, S.-L., Smith, U., Ericson, F., Engström, M., Kaplan, W. (2001) Electrical properties of the TiSi2–Si transition region in contacts: The influence of an interposed layer of Nb. Journal of Applied Physics, 90 (5). 2380-2388 doi:10.1063/1.1384486
Grasser, Tibor, Kosina, Hans, Gritsch, Markus, Selberherr, Siegfried (2001) Using six moments of Boltzmann’s transport equation for device simulation. Journal of Applied Physics, 90 (5). 2389-2396 doi:10.1063/1.1389757
Glunz, S. W., Rein, S., Lee, J. Y., Warta, W. (2001) Minority carrier lifetime degradation in boron-doped Czochralski silicon. Journal of Applied Physics, 90 (5). 2397-2404 doi:10.1063/1.1389076
Krispin, P., Spruytte, S. G., Harris, J. S., Ploog, K. H. (2001) Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy. Journal of Applied Physics, 90 (5). 2405-2410 doi:10.1063/1.1391218
Krupenin, V. A., Zorin, A. B., Savvateev, M. N., Presnov, D. E., Niemeyer, J. (2001) Single-electron transistor with metallic microstrips instead of tunnel junctions. Journal of Applied Physics, 90 (5). 2411-2415 doi:10.1063/1.1389758
Callegaro, Luca, Puppin, Ezio, Ricci, Simona (2001) Barkhausen noise and size effects in magnetic microstructures. Journal of Applied Physics, 90 (5). 2416-2421 doi:10.1063/1.1388023
Mahendiran, R., Maignan, A., Hervieu, M., Martin, C., Raveau, B. (2001) Anomalous increase of resistivity against thermal cycling in some of the phase separated manganites. Journal of Applied Physics, 90 (5). 2422-2426 doi:10.1063/1.1388171
Bae, Seongtae, Judy, Jack H., Tsu, I-Fei, Murdock, Edward S. (2001) Electromigration-induced failure of single layered NiFe Permalloy thin films for a giant magnetoresistive read head. Journal of Applied Physics, 90 (5). 2427-2432 doi:10.1063/1.1389337
Duenas, T. A., Carman, G. P. (2001) Particle distribution study for low-volume fraction magnetostrictive composites. Journal of Applied Physics, 90 (5). 2433-2439 doi:10.1063/1.1389518
Kazakova, O., Hanson, M., Blomquist, P., WĂ€ppling, R. (2001) Arrays of epitaxial Co submicron particles: Critical size for single-domain formation and multidomain structures. Journal of Applied Physics, 90 (5). 2440-2446 doi:10.1063/1.1389526
Boscolo, I., Cialdi, S., Valentini, M., Gammino, S., Ciavola, G., Celona, L., Marletta, S., Riege, H., Handerek, J. (2001) Ion source improvement by electron injection from a ferroelectric cathode. Journal of Applied Physics, 90 (5). 2447-2454 doi:10.1063/1.1388601
Jung, Woo-Hwan (2001) Dielectric loss anomaly and polaron hopping conduction of Gd1/3Sr2/3FeO3. Journal of Applied Physics, 90 (5). 2455-2458 doi:10.1063/1.1388600
Robert, G., Damjanovic, D., Setter, N. (2001) Preisach distribution function approach to piezoelectric nonlinearity and hysteresis. Journal of Applied Physics, 90 (5). 2459-2464 doi:10.1063/1.1388855
Ang, Chen, Bhalla, A. S., Guo, Ruyan, Cross, L. E. (2001) Effect of dc bias on dielectric properties of Cd2Nb2O7 ceramics. Journal of Applied Physics, 90 (5). 2465-2468 doi:10.1063/1.1388856
Kim, Jin Yong, Hwang, Moo Sung, Kim, Yoon-Hae, Kim, Hyeong Joon, Lee, Young (2001) Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition. Journal of Applied Physics, 90 (5). 2469-2473 doi:10.1063/1.1388861
Takeuchi, I., Chang, K., Sharma, R. P., Bendersky, L. A., Chang, H., Xiang, X.-D., Stach, E. A., Song, C.-Y. (2001) Microstructural properties of (Ba, Sr)TiO3 films fabricated from BaF2/SrF2/TiO2 amorphous multilayers using the combinatorial precursor method. Journal of Applied Physics, 90 (5). 2474-2478 doi:10.1063/1.1388563
Viehland, D., Ewart, L., Powers, J., Li, J. F. (2001) Stress dependence of the electromechanical properties of 〈001〉-oriented Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals: Performance advantages and limitations. Journal of Applied Physics, 90 (5). 2479-2483 doi:10.1063/1.1389480
Li, Wenfang, Weng, G. J. (2001) Micromechanics simulation of spontaneous polarization in ferroelectric crystals. Journal of Applied Physics, 90 (5). 2484-2491 doi:10.1063/1.1388567
Laude, V., Khelif, A., Pastureaud, Th., Ballandras, S. (2001) Generally polarized acoustic waves trapped by high aspect ratio electrode gratings at the surface of a piezoelectric material. Journal of Applied Physics, 90 (5). 2492-2497 doi:10.1063/1.1394160
Uedono, Akira, Chen, Zhi Quan, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa, Fukui, Shiomi, Shiota, Atsushi, Kimura, Shin-ichi (2001) Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams. Journal of Applied Physics, 90 (5). 2498-2503 doi:10.1063/1.1388858
Nanda, J., Sarma, D. D. (2001) Photoemission spectroscopy of size selected zinc sulfide nanocrystallites. Journal of Applied Physics, 90 (5). 2504-2510 doi:10.1063/1.1389521
Ć tichauer, L., Mirone, A., Turchini, S., Prosperi, T., Zennaro, S., Zema, N., Lama, F., Pontin, R., Ć imĆĄa, Z., Tailhades, Ph., Bonningue, C. (2001) X-ray absorption spectroscopy and magnetic circular dichroism of the Mn-ferrite nanocrystalline thin films. Journal of Applied Physics, 90 (5). 2511-2516 doi:10.1063/1.1389519
Petrovsky, V., Gorman, B. P., Anderson, H. U., Petrovsky, T. (2001) Optical properties of CeO2 films prepared from colloidal suspension. Journal of Applied Physics, 90 (5). 2517-2521 doi:10.1063/1.1389329
Ceccato, R., Maschio, R. Dal, Gialanella, S., Mariotto, G., Montagna, M., Rossi, F., Ferrari, M., Lipinska-Kalita, K. E., Ohki, Y. (2001) Nucleation of Ga2O3 nanocrystals in the K2O–Ga2O3–SiO2 glass system. Journal of Applied Physics, 90 (5). 2522-2527 doi:10.1063/1.1365426
Scherer, H., Weimann, Th., Zorin, A. B., Niemeyer, J. (2001) The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors. Journal of Applied Physics, 90 (5). 2528-2532 doi:10.1063/1.1389077
Hordequin, C., Tromson, D., Brambilla, A., Bergonzo, P., Foulon, F. (2001) Strong impact of x-ray radiation associated with electron beam metallization of diamond devices. Journal of Applied Physics, 90 (5). 2533-2537 doi:10.1063/1.1338515
Tan, C. H., David, J. P. R., Rees, G. J., Tozer, R. C., Herbert, D. C. (2001) Treatment of soft threshold in impact ionization. Journal of Applied Physics, 90 (5). 2538-2543 doi:10.1063/1.1388865
Rodrı́guez, A., Rodrı́guez, T., Olivares, J., Sangrador, J., Martı́n, P., Martı́nez, O., JimĂ©nez, J., Ballesteros, C. (2001) Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films. Journal of Applied Physics, 90 (5). 2544-2552 doi:10.1063/1.1389075
Jahn, U., Okamoto, T., Yamada, A., Konagai, M. (2001) Doping and intermixing in CdS/CdTe solar cells fabricated under different conditions. Journal of Applied Physics, 90 (5). 2553-2558 doi:10.1063/1.1388565
Saito, R., Sano, J., Ishigaki, N., Kimura, T., Yugo, S. (2001) Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition. Journal of Applied Physics, 90 (5). 2559-2564 doi:10.1063/1.1389524
Loo, R., Meunier-Beillard, P., Vanhaeren, D., Bender, H., Caymax, M., Vandervorst, W., Dentel, D., Goryll, M., Vescan, L. (2001) Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor. Journal of Applied Physics, 90 (5). 2565-2574 doi:10.1063/1.1389335
Santos, P. V., Trampert, A., Dondeo, F., Comedi, D., Zhu, H. J., Ploog, K. H., Zanatta, A. R., Chambouleyron, I. (2001) Epitaxial pulsed laser crystallization of amorphous germanium on GaAs. Journal of Applied Physics, 90 (5). 2575-2581 doi:10.1063/1.1390312
Hammond, Richard T., Meier, Ben, Atkins, Scott, Davis, Jon, Bobb, Lloyd (2001) Ultralow frequency waves and total electron content fluctuations. Journal of Applied Physics, 90 (5). 2582-2590 doi:10.1063/1.1380999
Kim, Jaemyung, No, Kwangsoo, Lee, Cheol Jin (2001) Growth and field emission of carbon nanotubes on electroplated Ni catalyst coated on glass substrates. Journal of Applied Physics, 90 (5). 2591-2594 doi:10.1063/1.1389761
Oriols, X., Martı́n, F. (2001) Analytical solitons in nonlinear transmission lines loaded with heterostructure barrier varactors. Journal of Applied Physics, 90 (5). 2595-2600 doi:10.1063/1.1388863
Huang, S. M., Sun, Z., An, C. W., Lu, Y. F., Hong, M. H. (2001) Electron field emission from polymer films treated by a pulsed ultraviolet laser. Journal of Applied Physics, 90 (5). 2601-2605 doi:10.1063/1.1390502
Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi (2001) GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices. Journal of Applied Physics, 90 (5). 2606-2611 doi:10.1063/1.1389482
Chinh, Tran Duc, Seibt, Wolfgang, Siegbahn, Kai (2001) Dot patterns from second-harmonic and sum-frequency generation in polycrystalline ZnSe. Journal of Applied Physics, 90 (5). 2612-2614 doi:10.1063/1.1388576
Sun, C. Q., Tay, B. K., Lau, S. P., Sun, X. W., Zeng, X. T., Li, S., Bai, H. L., Liu, H., Liu, Z. H., Jiang, E. Y. (2001) Bond contraction and lone pair interaction at nitride surfaces. Journal of Applied Physics, 90 (5). 2615-2617 doi:10.1063/1.1390305
Dey, Soma, Varma, Shikha (2001) Anomalous behavior of Sb implanted Si after mega-electron-volt carbon irradiation. Journal of Applied Physics, 90 (5). 2618-2620 doi:10.1063/1.1389485
Macdonald, Daniel, Cuevas, AndrĂ©s (2001) Comment on “Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity” [J. Appl. Phys.89, 332 (2001)]. Journal of Applied Physics, 90 (5). 2621-2622 doi:10.1063/1.1390306
Skuras, E., Long, A. R., Chowdhury, S., Rahman, M., Kirk, K. J., Davies, J. H. (2001) Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas. Journal of Applied Physics, 90 (5). 2623-2625 doi:10.1063/1.1388574
Bufler, F. M., Schenk, A., Fichtner, W. (2001) Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge. Journal of Applied Physics, 90 (5). 2626-2628 doi:10.1063/1.1388597

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