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Choi, W. K., Natarajan, A., Bera, L. K., Wee, A. T. S., Liu, Y. J. (2002) Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics, 91 (4). 2443-2448 doi:10.1063/1.1431435

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Reference TypeJournal (article/letter/editorial)
TitleRapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films
JournalJournal of Applied Physics
AuthorsChoi, W. K.Author
Natarajan, A.Author
Bera, L. K.Author
Wee, A. T. S.Author
Liu, Y. J.Author
Year2002 (February 15)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1431435Search in ResearchGate
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Mindat Ref. ID5113664Long-form Identifiermindat:1:5:5113664:8
GUID0
Full ReferenceChoi, W. K., Natarajan, A., Bera, L. K., Wee, A. T. S., Liu, Y. J. (2002) Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics, 91 (4). 2443-2448 doi:10.1063/1.1431435
Plain TextChoi, W. K., Natarajan, A., Bera, L. K., Wee, A. T. S., Liu, Y. J. (2002) Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics, 91 (4). 2443-2448 doi:10.1063/1.1431435
In(2002, February) Journal of Applied Physics Vol. 91 (4) AIP Publishing

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Choi, W. K., Teh, L. K., Bera, L. K., Chim, W. K., Wee, A. T. S, Jie, Y. X. (2002) Microstructural characterization of rf sputtered polycrystalline silicon germanium films. Journal of Applied Physics, 91 (1). 444pp. doi:10.1063/1.1423388
LEOY, C. C., KAN, EWH, ARIANTO, J., CHOI, W. K., WEE, A. T. S., LIU, Y. J. (2002) OXIDATION STUDY OF RF SPUTTERED AMORPHOUS AND POLYCRYSTALLINE SILICON GERMANIUM FILMS. International Journal of Modern Physics B, 16 (28). 4224-4227 doi:10.1142/s0217979202015133
Choi, W. K., Choo, C. K., Lu, Y. F. (1996) Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films. Journal of Applied Physics, 80 (10). 5837-5842 doi:10.1063/1.363576
Choi, W. K., Chen, J. H., Bera, L. K., Feng, W., Pey, K. L., Mi, J., Yang, C. Y., Ramam, A., Chua, S. J., Pan, J. S., Wee, A. T. S., Liu, R. (2000) Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition. Journal of Applied Physics, 87 (1). 192-197 doi:10.1063/1.371843
Choi, W. K., Choo, C. K., Han, K. K., Chen, J. H., Loh, F. C., Tan, K. L. (1998) Densification of radio frequency sputtered silicon oxide films by rapid thermal annealing. Journal of Applied Physics, 83 (4). 2308-2314 doi:10.1063/1.366974
Choi, W. K., Han, L. J., Chua, L. G. (1998) Noise characteristics of radio frequency sputtered amorphous silicon carbide films. Journal of Applied Physics, 84 (9). 5057-5059 doi:10.1063/1.368798
Choi, W. K., Han, L. J., Loo, F. L. (1997) Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films. Journal of Applied Physics, 81 (1). 276-280 doi:10.1063/1.363845
Choi, W. K., Ong, T. Y., Tan, L. S., Loh, F. C., Tan, K. L. (1998) Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films. Journal of Applied Physics, 83 (9). 4968-4973 doi:10.1063/1.367299
LEOY, C. C., CHOI, W. K., WONG, K. L., WONG, K. M., OSIPOWICZ, T., RONG, J. (2002) X-RAY DIFFRACTION AND RAMAN STUDIES OF RF SPUTTERED POLYCRYSTALLINE SILICON GERMANIUM FILMS. International Journal of Modern Physics B, 16 (28). 4263-4266 doi:10.1142/s0217979202015224
Bera, L. K., Choi, W. K., Feng, W., Yang, C. Y., Mi, J. (2000) Electrical properties of rapid thermal oxides on Si1−x−yGexCy films. Applied Physics Letters, 77 (2). 256-258 doi:10.1063/1.126942
Choi, W. K., Loo, F. L., Ling, C. H., Loh, F. C., Tan, K. L. (1995) Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films. Journal of Applied Physics, 78 (12). 7289-7294 doi:10.1063/1.360377
 
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