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Cui, L. J., Zeng, Y. P., Wang, B. Q., Wu, J., Zhu, Z. P., Lin, L. Y. (2002) Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates. Journal of Applied Physics, 91 (4). 2429-2432 doi:10.1063/1.1433174

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Reference TypeJournal (article/letter/editorial)
TitleRapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates
JournalJournal of Applied Physics
AuthorsCui, L. J.Author
Zeng, Y. P.Author
Wang, B. Q.Author
Wu, J.Author
Zhu, Z. P.Author
Lin, L. Y.Author
Year2002 (February 15)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1433174Search in ResearchGate
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Mindat Ref. ID5113713Long-form Identifiermindat:1:5:5113713:3
GUID0
Full ReferenceCui, L. J., Zeng, Y. P., Wang, B. Q., Wu, J., Zhu, Z. P., Lin, L. Y. (2002) Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates. Journal of Applied Physics, 91 (4). 2429-2432 doi:10.1063/1.1433174
Plain TextCui, L. J., Zeng, Y. P., Wang, B. Q., Wu, J., Zhu, Z. P., Lin, L. Y. (2002) Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates. Journal of Applied Physics, 91 (4). 2429-2432 doi:10.1063/1.1433174
In(2002, February) Journal of Applied Physics Vol. 91 (4) AIP Publishing

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Cui, L. J., Zeng, Y. P., Wang, B. Q., Zhu, Z. P., Lin, L. Y., Jiang, C. P., Guo, S. L., Chu, J. H. (2002) Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements. Applied Physics Letters, 80 (17). 3132-3134 doi:10.1063/1.1476055
Cui, L. J., Zeng, Y. P., Wang, B. Q., Zhu, Z. P., Guo, S. L., Chu, J. H. (2006) Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates. Journal of Applied Physics, 100 (3). 33705pp. doi:10.1063/1.2222404
Jiang, C. P., Huang, Z. M., Li, Z. F., Yu, J., Guo, S. L., Lu, W., Chu, J. H., Cui, L. J., Zeng, Y. P., Zhu, Z. P., Wang, B. Q. (2001) Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates. Applied Physics Letters, 79 (9). 1375-1377 doi:10.1063/1.1396818
Jiang, C. P., Huang, Z. M., Guo, S. L., Chu, J. H., Cui, L. J., Zeng, Y. P., Zhu, Z. P., Wang, B. Q. (2001) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates. Applied Physics Letters, 79 (12). 1909-1911 doi:10.1063/1.1396625
Ihn, Soo-Ghang, Jo, Seong-June, Song, Jong-In (2005) Effects of postgrowth rapid thermal annealing on InAlAs∕InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs∕InGaAlAs buffer. Applied Physics Letters, 87 (4). 42108pp. doi:10.1063/1.1988983
Ihn, Soo-Ghang, Jo, Seong-June, Song, Jong-In (2004) Effects of rapid thermal annealing on quality of In0.52Al0.48As∕In0.53Ga0.47As multiquantum wells grown on a compositionally graded InAlAs∕InAlGaAs metamorphic buffer layer. Applied Physics Letters, 85 (26). 6335-6337 doi:10.1063/1.1833566
Zhou, W. Z., Wang, W., Chang, Z. G., Wang, Y. Z., Lan, Z. Q., Shang, L. Y., Lin, T., Cui, L. J., Zeng, Y. P., Li, G. X., Yu, C. H., Guo, J., Chu, J. H. (2012) Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells. Journal of Applied Physics, 112 (2). 23713pp. doi:10.1063/1.4737777
Lee, C. S., Chen, Y. J., Hsu, W. C., Su, K. H., Huang, J. C., Huang, D. H., Wu, C. L. (2006) High-temperature threshold characteristics of a symmetrically graded InAlAs∕InxGa1−xAs∕GaAs metamorphic high electron mobility transistor. Applied Physics Letters, 88 (22). 223506pp. doi:10.1063/1.2208926
Ihn, Soo-Ghang, Jo, Seong June, Song, Jong-In (2006) Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing. Applied Physics Letters, 88 (13). 132108pp. doi:10.1063/1.2189607
Win, P., Druelle, Y., Cappy, A., Cordier, Y., Favre, J., Bouillet, C. (1992) Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization. Applied Physics Letters, 61 (8). 922-924 doi:10.1063/1.107729
Streit, D. C., Jones, W. L., Sadwick, L. P., Kim, C. W., Hwu, R. J. (1991) Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures. Applied Physics Letters, 58 (20). 2273-2275 doi:10.1063/1.104897
 
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