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Nikiforov, A. I., Ulyanov, V. V., Teys, S. A., Gutakovsky, A. K., Pchelyakov, O. P., Yakimov, A. I., Fonseca, A., Leitão, J. P., Sobolev, N. A. (2007) MBE growth of vertically ordered Ge quantum dots on Si. physica status solidi (c), 4 (2). 262-264 doi:10.1002/pssc.200673309

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Reference TypeJournal (article/letter/editorial)
TitleMBE growth of vertically ordered Ge quantum dots on Si
Journalphysica status solidi (c)
AuthorsNikiforov, A. I.Author
Ulyanov, V. V.Author
Teys, S. A.Author
Gutakovsky, A. K.Author
Pchelyakov, O. P.Author
Yakimov, A. I.Author
Fonseca, A.Author
Leitão, J. P.Author
Sobolev, N. A.Author
Year2007 (February)Volume4
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200673309Search in ResearchGate
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Mindat Ref. ID5113732Long-form Identifiermindat:1:5:5113732:8
GUID0
Full ReferenceNikiforov, A. I., Ulyanov, V. V., Teys, S. A., Gutakovsky, A. K., Pchelyakov, O. P., Yakimov, A. I., Fonseca, A., Leitão, J. P., Sobolev, N. A. (2007) MBE growth of vertically ordered Ge quantum dots on Si. physica status solidi (c), 4 (2). 262-264 doi:10.1002/pssc.200673309
Plain TextNikiforov, A. I., Ulyanov, V. V., Teys, S. A., Gutakovsky, A. K., Pchelyakov, O. P., Yakimov, A. I., Fonseca, A., Leitão, J. P., Sobolev, N. A. (2007) MBE growth of vertically ordered Ge quantum dots on Si. physica status solidi (c), 4 (2). 262-264 doi:10.1002/pssc.200673309
In(2007, February) physica status solidi (c) Vol. 4 (2) Wiley

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Nikiforov, A. I., Ulyanov, V. V., Milekhin, A. G., Pchelyakov, O. P., Teys, S. A., Schulze, S., Zahn, D. R. T. (2004) Formation of Ge nanoislands on pure and oxidized Si surfaces by MBE. physica status solidi (c), 1 (2). 360-363 doi:10.1002/pssc.200303952
Yakimov, A. I., Dvurechenskii, A. V., Minkov, G. M., Sherstobitov, A. A., Nikiforov, A. I., Bloshkin, A. A., Stepina, N. P., Leitão, J. P., Sobolev, N. A., Pereira, L., do Carmo, M. C. (2006) Hopping magnetoresistance in two-dimensional arrays of Ge/Si quantum dots. physica status solidi (c), 3 (2). 296-299 doi:10.1002/pssc.200562738
Yakimov, A. I., Nikiforov, A. I., Dvurechenskii, A. V., Bloshkin, A. A. (2007) Localization of electrons in type-II Ge/Si quantum dots stacked in a multilayer structure. physica status solidi (c), 4 (2). 442-444 doi:10.1002/pssc.200673348
Yakimov, A. I., Dvurechenskii, A. V., Proskuryakov, Yu. Yu., Nikiforov, A. I., Pchelyakov, O. P., Teys, S. A., Gutakovskii, A. K. (1999) Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots. Applied Physics Letters, 75 (10). 1413-1415 doi:10.1063/1.124710
Stepina, N. P., Yakimov, A. I., Nenashev, A.V., Dvurechenskii, A. V., Peregoedov, A. V., Nikiforov, A. I. (2005) Hopping photoconductivity and its long-time relaxation in two-dimensional array of Ge/Si quantum dots. physica status solidi (c), 2 (8). 3118-3121 doi:10.1002/pssc.200460773
Yakimov, A. I., Dvurechenskii, A. V., Nenashev, A. V., Nikiforov, A. I., Bloshkin, A. A., Timonova, M. N. (2004) Two-dimensional phononless VRH conduction in arrays of Ge/Si quantum dots. physica status solidi (c), 1 (1). 51-54 doi:10.1002/pssc.200303648
Zinovieva, A. F., Dvurechenskii, A. V., Stepina, N. P., Deryabin, A. S., Nikiforov, A. I., Rubinger, R. M., Sobolev, N. A., Leitão, J. P., Carmo, M. C. (2009) Asymmetry effect on the spin relaxation in quantum dot structures. physica status solidi (c), 6 (4). 833-836 doi:10.1002/pssc.200880607
Pchelyakov, O. P., Dvurechenskii, A. V., Nikiforov, A. I., Voitsekhovskii, A. V., Grigor’ev, D. V., Kokhanenko, A. P. (2011) Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications. Russian Physics Journal, 53 (9). 943-948 doi:10.1007/s11182-011-9514-6
Yakimov, A. I., Dvurechenskii, A. V., Nikiforov, A. I., Ulyanov, V. V., Milekhin, A. G., Govorov, A. O., Schulze, S., Zahn, D. R. T. (2003) Stark effect in type-II Ge/Si quantum dots. Physical Review B, 67 (12) doi:10.1103/physrevb.67.125318
Nikiforov, A. I., Ul’yanov, V. V., Pchelyakov, O. P., Teys, S. A., Gutakovskii, A. K. (2004) Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface. Physics of the Solid State, 46. 77-79 doi:10.1134/1.1641926
Yakimov, A. I., Adkins, C. J., Boucher, R., Dvurechenskii, A. V., Nikiforov, A. I., Pchelyakov, O. P., Biskupski, G. (1999) Hopping conduction and field effect in Si modulation-doped structures with embedded Ge quantum dots. Physical Review B, 59 (19) 12598-12603 doi:10.1103/physrevb.59.12598
 
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