Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Rasras, Mahmoud, Wolf, Ingrid De, Groeseneken, Guido, Degraeve, Robin, Maes, Herman E. (2002) Origin of substrate hole current after gate oxide breakdown. Journal of Applied Physics, 91 (4). 2155-2160 doi:10.1063/1.1434550

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleOrigin of substrate hole current after gate oxide breakdown
JournalJournal of Applied Physics
AuthorsRasras, MahmoudAuthor
Wolf, Ingrid DeAuthor
Groeseneken, GuidoAuthor
Degraeve, RobinAuthor
Maes, Herman E.Author
Year2002 (February 15)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1434550Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113769Long-form Identifiermindat:1:5:5113769:2
GUID0
Full ReferenceRasras, Mahmoud, Wolf, Ingrid De, Groeseneken, Guido, Degraeve, Robin, Maes, Herman E. (2002) Origin of substrate hole current after gate oxide breakdown. Journal of Applied Physics, 91 (4). 2155-2160 doi:10.1063/1.1434550
Plain TextRasras, Mahmoud, Wolf, Ingrid De, Groeseneken, Guido, Degraeve, Robin, Maes, Herman E. (2002) Origin of substrate hole current after gate oxide breakdown. Journal of Applied Physics, 91 (4). 2155-2160 doi:10.1063/1.1434550
In(2002, February) Journal of Applied Physics Vol. 91 (4) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Crupi, Felice, Degraeve, Robin, Groeseneken, Guido, Nigam, Tanya, Maes, Herman (1999) Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown. Japanese Journal of Applied Physics, 38. 2219-2222 doi:10.1143/jjap.38.2219
Rasras, Mahmoud S., De Wolf, Ingrid, Groeseneken, Guido, Maes, Herman E. (2001) Spectroscopic identification of light emitted from defects in silicon devices. Journal of Applied Physics, 89 (1). 249-258 doi:10.1063/1.1322595
Van den bosch, Geert, Groeseneken, Guido, Maes, Herman E., Klein, Richard B., Saks, Nelson S. (1994) Oxide and interface degradation resulting from substrate hot‐hole injection in metal‐oxide‐semiconductor field‐effect transistors at 295 and 77 K. Journal of Applied Physics, 75 (4). 2073-2080 doi:10.1063/1.356311
Depas, Michel, Degraeve, Robin, Nigam, Tanya, Groeseneken, Guido, Heyns, Marc (1997) Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime. Japanese Journal of Applied Physics, 36. 1602-1608 doi:10.1143/jjap.36.1602
O’Connor, Robert, Pantisano, Luigi, Degraeve, Robin, Kauerauf, Thomas, Kaczer, Ben, Roussel, Phillipe, Groeseneken, Guido (2008) Electron energy dependence of defect generation in high-k gate stacks. Journal of Applied Physics, 103 (6). 64503pp. doi:10.1063/1.2844485
Das, J., Degraeve, R., Roussel, P., Groeseneken, G., Borghs, G., Boeck, J. De (2002) Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions. Journal of Applied Physics, 91 (10). 7712pp. doi:10.1063/1.1447180
De Wolf, Ingrid, Ignat, Michel, Pozza, Georges, Maniguet, Laurent, Maes, Herman E. (1999) Analysis of local mechanical stresses in and near tungsten lines on silicon substrate. Journal of Applied Physics, 85 (9). 6477-6485 doi:10.1063/1.370151
Van den bosch, Geert, Groeseneken, Guido, Maes, Herman E. (1993) Direct and post‐injection oxide and interface trap generation resulting from low‐temperature hot‐electron injection. Journal of Applied Physics, 74 (9). 5582-5586 doi:10.1063/1.354219
Xu, Zhen, Kaczer, Ben, Degraeve, Robin, De Gendt, Stefan, Heyns, Marc, Groeseneken, Guido (2003) Electrical Properties of Al[sub 2]O[sub 3]/ZrO[sub 2]/Al[sub 2]O[sub 3] Gate Stack in p-Substrate Metal Oxide Semiconductor Devices. Journal of the Electrochemical Society, 150. doi:10.1149/1.1566022
Das, J., Degraeve, R., Groeseneken, G., Stein, S., Kohlstedt, H., Borghs, G., De Boeck, J. (2003) Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions. Journal of Applied Physics, 94 (4). 2749-2751 doi:10.1063/1.1592300
Govoreanu, Bogdan, Degraeve, Robin, Kauerauf, Thomas, Magnus, Wim, Wellekens, Dirk, Groeseneken, Guido, Van Houdt, Jan (2006) Performance of Direct Tunneling Floating Gate Memory with Medium-Îș Dielectrics for Embedded-Random-Access Memory Applications. Japanese Journal of Applied Physics, 45 (4) 3170-3175 doi:10.1143/jjap.45.3170
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 21, 2025 17:58:37
Go to top of page