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Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M. (2007) Enhancement mode high mobility n-MOSFET on gallium arsenide substrate. physica status solidi (c), 4 (5). 1671-1674 doi:10.1002/pssc.200674284

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement mode high mobility n-MOSFET on gallium arsenide substrate
Journalphysica status solidi (c)
AuthorsRajagopalan, K.Author
Abrokwah, J.Author
Droopad, R.Author
Passlack, M.Author
Year2007 (April)Volume4
Issue5
PublisherWiley
DOIdoi:10.1002/pssc.200674284Search in ResearchGate
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Mindat Ref. ID5114301Long-form Identifiermindat:1:5:5114301:9
GUID0
Full ReferenceRajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M. (2007) Enhancement mode high mobility n-MOSFET on gallium arsenide substrate. physica status solidi (c), 4 (5). 1671-1674 doi:10.1002/pssc.200674284
Plain TextRajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M. (2007) Enhancement mode high mobility n-MOSFET on gallium arsenide substrate. physica status solidi (c), 4 (5). 1671-1674 doi:10.1002/pssc.200674284
In(2007, April) physica status solidi (c) Vol. 4 (5) Wiley

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Droopad, Ravi, Rajagopalan, Karthik, Abrokwah, Jon, Adams, Liz, England, Nate, Uebelhoer, Dave, Fejes, Peter, Zurcher, Peter, Passlack, Matthias (2007) Development of GaAs-based MOSFET using molecular beam epitaxy. Journal of Crystal Growth, 301. 139-144 doi:10.1016/j.jcrysgro.2006.11.190
Risch, M., Bradley, M. (2008) Predicted depth profiles for nitrogen-ion implantation into gallium arsenide. physica status solidi (c), 5 (4). 939-942 doi:10.1002/pssc.200778323
Yu, Z., Overgaard, C. D., Droopad, R., Passlack, M., Abrokwah, J. K. (2003) Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy. Applied Physics Letters, 82 (18). 2978-2980 doi:10.1063/1.1572478
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Maier, M., Köhler, K., Kunzer, M., Wiegert, J., Liu, S., Kaufmann, U., Wagner, J. (2008) Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate. physica status solidi (c), 5 (6). 2133-2135 doi:10.1002/pssc.200778475
Doi, K., Maida, N., Kimura, K., Tachibana, A. (2007) First-principle study on crystal growth of Ga and N layers on GaN substrate. physica status solidi (c), 4 (7). 2293-2296 doi:10.1002/pssc.200674798
Vaughan, M. P., Ridley, B. K. (2007) Effect of non-parabolicity on the density of states for high-field mobility calculations in dilute nitrides. physica status solidi (c), 4 (2). 686-688 doi:10.1002/pssc.200673342
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Pougeoise, E., Gilet, Ph., Dunoyer, N., Grosse, Ph., Poncet, S., Grenouillet, L., Duvaut, Ph., Chelnokov, A., Gérard, J.-M., Hamelin, R., Rossat, C. (2006) Gallium arsenide second-window quantum dot VCSEL. physica status solidi (c), 3 (3). 395-398 doi:10.1002/pssc.200564159
Passlack, M., Abrokwah, J. K., Yu, Z., Droopad, R., Overgaard, C., Kawayoshi, H. (2003) Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures. Applied Physics Letters, 82 (11). 1691-1693 doi:10.1063/1.1560875
 
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