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Lee, S. W., Goto, H., Minegishi, T., Lee, W. H., Ha, J. S., Lee, H. J., Lee, Hyo-jong, Lee, S. H., Goto, T., Hanada, T., Cho, M. W., Yao, T. (2007) Characterization of free-standing GaN substrates prepared by self lift-off. physica status solidi (c), 4 (7). 2617-2620 doi:10.1002/pssc.200674783

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of free-standing GaN substrates prepared by self lift-off
Journalphysica status solidi (c)
AuthorsLee, S. W.Author
Goto, H.Author
Minegishi, T.Author
Lee, W. H.Author
Ha, J. S.Author
Lee, H. J.Author
Lee, Hyo-jongAuthor
Lee, S. H.Author
Goto, T.Author
Hanada, T.Author
Cho, M. W.Author
Yao, T.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674783Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114598Long-form Identifiermindat:1:5:5114598:3
GUID0
Full ReferenceLee, S. W., Goto, H., Minegishi, T., Lee, W. H., Ha, J. S., Lee, H. J., Lee, Hyo-jong, Lee, S. H., Goto, T., Hanada, T., Cho, M. W., Yao, T. (2007) Characterization of free-standing GaN substrates prepared by self lift-off. physica status solidi (c), 4 (7). 2617-2620 doi:10.1002/pssc.200674783
Plain TextLee, S. W., Goto, H., Minegishi, T., Lee, W. H., Ha, J. S., Lee, H. J., Lee, Hyo-jong, Lee, S. H., Goto, T., Hanada, T., Cho, M. W., Yao, T. (2007) Characterization of free-standing GaN substrates prepared by self lift-off. physica status solidi (c), 4 (7). 2617-2620 doi:10.1002/pssc.200674783
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Lee, H. J., Lee, S. W., Goto, H., Lee, Hyo-Jong, Ha, J. S., Cho, M. W., Yao, T. (2007) Free standing GaN layers with GaN nanorod buffer layer. physica status solidi (c), 4 (7). 2268-2271 doi:10.1002/pssc.200674858
Lee, S. W., Minegishi, T., Lee, W. H., Goto, H., Lee, H. J., Lee, S. H., Lee, Hyo-Jong, Ha, J. S., Goto, T., Hanada, T., Cho, M. W., Yao, T. (2007) Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique. Applied Physics Letters, 90 (6). 61907pp. doi:10.1063/1.2470163
Goto, H., Lee, S. W., Lee, H. J., Lee, Hyo-Jong, Ha, J. S., Cho, M. W., Yao, T. (2008) Chemical lift-off of GaN epitaxial films grown on c-sapphire substrates with CrN buffer layers. physica status solidi (c), 5 (6). 1659-1661 doi:10.1002/pssc.200778573
Lee, Hyun-Jae, Ha, Jun-Seok, Lee, Hyo-Jong, Lee, S. W., Fujii, K., Hong, S. K., Chang, J. H., Cho, M. W., Goto, Takenari, Yao, T. (2009) Fabrication of free-standing GaN substrate using evaporable buffer layer (EBL). physica status solidi (c), 6. doi:10.1002/pssc.200880874
Lee, S. W., Oh, D. C., Goto, H., Ha, J. S., Lee, H. J., Hanada, T., Cho, M. W., Hong, S. K., Lee, H. Y., Cho, S. R., Choi, J. W., Choi, J. H., Jang, J. H., Shin, J. E., Lee, J. S., Yao, T. (2007) Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices. physica status solidi (c), 4 (1). 37-40 doi:10.1002/pssc.200673552
Lee, Hyo-Jong, Ha, Jun-Seok, Lee, S. W., Lee, H. J., Goto, H., Lee, S. H., Cho, M. W., Yao, T., Minegishi, T., Hanada, T., Hong, Soon-Ku, Sakata, Osami, Lee, Jae Wook, Lee, Jeong Yong (2007) Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy. Applied Physics Letters, 91 (20). 202116pp. doi:10.1063/1.2815919
Lee, Hyun-Jae, Lee, S. W., Goto, H., Lee, Sang-Hyun, Lee, Hyo-Jong, Ha, J. S., Goto, Takenari, Cho, M. W., Yao, T., Hong, Soon-Ku (2007) Self-separated freestanding GaN using a NH4Cl interlayer. Applied Physics Letters, 91 (19). 192108pp. doi:10.1063/1.2806912
Lee, S. W., Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Hyo-Jong, Goto, H., Hanada, T., Goto, T., Fujii, Katsushi, Cho, M. W., Yao, T. (2009) Lattice strain in bulk GaN epilayers grown on CrN/sapphire template. Applied Physics Letters, 94 (8). 82105pp. doi:10.1063/1.3086890
Goto, H., Lee, S. W., Kinomoto, J., Kim, S. T., Ko, H. C., Cho, M. W., Yao, T. (2007) Growth of thick GaN layers on c-plane sapphire substrates using stress absorbing layer (SAL). physica status solidi (c), 4 (1). 116-119 doi:10.1002/pssc.200673573
Lee, S. W., Oh, D. C., Goto, H., Ha, J. S., Lee, H. J., Hanada, T., Cho, M. W., Yao, T., Hong, S. K., Lee, H. Y., Cho, S. R., Choi, J. W., Choi, J. H., Jang, J. H., Shin, J. E., Lee, J. S. (2006) Origin of forward leakage current in GaN-based light-emitting devices. Applied Physics Letters, 89 (13). 132117pp. doi:10.1063/1.2357930
Lee, S W, Ha, Jun-Seok, Lee, Hyun Jae, Lee, Hyo-Jong, Goto, H, Hanada, T, Goto, T, Fujii, Katsushi, Cho, M W, Yao, T (2010) An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films. Journal of Physics D: Applied Physics, 43. 175101pp. doi:10.1088/0022-3727/43/17/175101
 
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