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Soh, C. B., Hartono, H., Chen, P., Chua, S. J. (2007) Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures. physica status solidi (c), 4 (7). 2433-2436 doi:10.1002/pssc.200674797

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Reference TypeJournal (article/letter/editorial)
TitleIncorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures
Journalphysica status solidi (c)
AuthorsSoh, C. B.Author
Hartono, H.Author
Chen, P.Author
Chua, S. J.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674797Search in ResearchGate
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Mindat Ref. ID5114626Long-form Identifiermindat:1:5:5114626:5
GUID0
Full ReferenceSoh, C. B., Hartono, H., Chen, P., Chua, S. J. (2007) Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures. physica status solidi (c), 4 (7). 2433-2436 doi:10.1002/pssc.200674797
Plain TextSoh, C. B., Hartono, H., Chen, P., Chua, S. J. (2007) Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures. physica status solidi (c), 4 (7). 2433-2436 doi:10.1002/pssc.200674797
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Hartono, H., Soh, C. B., Chua, S. J., Fitzgerald, E. A. (2007) Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth. physica status solidi (c), 4 (7). 2572-2575 doi:10.1002/pssc.200674706
Soh, C. B., Hartono, H., Chow, S. Y., Chua, S. J., Tripathy, S. (2009) Threading dislocations annihilation in regrown GaN film on nanoporous GaN template. physica status solidi (c), 6. doi:10.1002/pssc.200880808
Chua, S. J., Soh, C. B., Liu, W., Teng, J. H., Ang, S. S., Teo, S. L. (2008) Quantum dots excited InGaN/GaN phosphor-free white LEDs. physica status solidi (c), 5 (6). 2189-2191 doi:10.1002/pssc.200778535
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Soh, C. B., Liu, W., Chua, S. J., Teng, J. H., Tan, Rayson J. N., Ang, S. S. (2009) Novel tunable phosphor-free white III-nitride light emitting diodes based on indium rich InGaN nanostructures. physica status solidi (c), 6. doi:10.1002/pssc.200880782
Soh, C. B., Chow, S. Y., Tan, L. Y., Hartono, H., Liu, W., Chua, S. J. (2008) Enhanced luminescence efficiency due to carrier localization in InGaN∕GaN heterostructures grown on nanoporous GaN templates. Applied Physics Letters, 93 (17). 173107pp. doi:10.1063/1.3005409
Vierheilig, C., Braun, H., Schwarz, U. T., Wegscheider, W., Baur, E., Strauß, U., Härle, V. (2007) Lateral diffusion of photogenerated carriers in InGaN/GaN heterostructures observed by PL measurements. physica status solidi (c), 4 (7). 2362-2365 doi:10.1002/pssc.200674771
Nakao, K., Li, D. B., Liu, Y. H., Miyake, H., Hiramatsu, K. (2007) Dependence of In mole fraction in InGaN on GaN facets. physica status solidi (c), 4 (7). 2383-2386 doi:10.1002/pssc.200674807
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Hakan Gürel, H., Akıncı, Özden, Ünlü, Hilmi (2007) Tight binding modelling of electronic band structure in conventional InGaN/GaN and dilute GaAsN/GaAs nitride heterostructures. physica status solidi (c), 4 (2). 316-318 doi:10.1002/pssc.200673273
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