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Sugita, K., Nagai, Y., Houchin, Y., Hashimoto, A., Yamamoto, A. (2007) Crystallographic deterioration of MOVPE InN during the growth. physica status solidi (c), 4 (7). 2461-2464 doi:10.1002/pssc.200674889

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Reference TypeJournal (article/letter/editorial)
TitleCrystallographic deterioration of MOVPE InN during the growth
Journalphysica status solidi (c)
AuthorsSugita, K.Author
Nagai, Y.Author
Houchin, Y.Author
Hashimoto, A.Author
Yamamoto, A.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674889Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114747Long-form Identifiermindat:1:5:5114747:7
GUID0
Full ReferenceSugita, K., Nagai, Y., Houchin, Y., Hashimoto, A., Yamamoto, A. (2007) Crystallographic deterioration of MOVPE InN during the growth. physica status solidi (c), 4 (7). 2461-2464 doi:10.1002/pssc.200674889
Plain TextSugita, K., Nagai, Y., Houchin, Y., Hashimoto, A., Yamamoto, A. (2007) Crystallographic deterioration of MOVPE InN during the growth. physica status solidi (c), 4 (7). 2461-2464 doi:10.1002/pssc.200674889
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Wang, W. J., Sugita, K., Nagai, Y., Houchin, Y., Hashimoto, A., Yamamoto, A. (2007) Polarity control of InN grown by MOVPE on sapphire (0001). physica status solidi (c), 4 (7). 2415-2418 doi:10.1002/pssc.200674744
Nagai, Y., Niwa, H., Hashimoto, A., Yamamoto, A. (2007) Adduct formation of CP2Mg with NH3 in MOVPE growth of Mg-doped InN. physica status solidi (c), 4 (7). 2457-2460 doi:10.1002/pssc.200674888
Yamamoto, A., Sugita, K., Nagai, Y., Hashimoto, A. (2008) Etching and optical deterioration of nitrogen-face of wurtzite InN in NH3 ambient. physica status solidi (c), 5 (6). 1762-1764 doi:10.1002/pssc.200778629
Cho, M. S., Sawazaki, N., Sugita, K., Hashimoto, A., Yamamoto, A., Ito, Y. (2007) Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates. physica status solidi (c), 4 (7). 2441-2444 doi:10.1002/pssc.200674845
Sugita, K., Hashimoto, A., Yamamoto, A. (2009) A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C). physica status solidi (c), 6. doi:10.1002/pssc.200880941
Houchin, Y., Hashimoto, A., Yamamoto, A. (2008) Atmospheric-pressure MOVPE growth of In-rich InAlN. physica status solidi (c), 5 (6). 1571-1574 doi:10.1002/pssc.200778499
Sugita, K., Sasamoto, K., Hashimoto, A., Yamamoto, A. (2011) Effects of Cp2Mg supply on MOVPE growth behavior of InN. physica status solidi (c), 8 (7). 2506-2508 doi:10.1002/pssc.201001084
Sugita, K., Hashimoto, A., Yamamoto, A. (2009) Effect of oxygen supply on MOVPE InN. physica status solidi (c), 6. doi:10.1002/pssc.200880940
Yamamoto, A., Kasashima, K., Sugita, K., Yasuda, M., Kuroda, C., Hashimoto, A. (2005) MOVPE growth of InN under high NH3 decomposition rate conditions. physica status solidi (c), 2 (7). 2285-2288 doi:10.1002/pssc.200461409
Yamamoto, A., Nagai, Y., Miwa, H., Hashimoto, A. (2006) Effects of GaN-buffer etching in atmospheric-pressure MOVPE growth of InN on sapphire. physica status solidi (c), 3 (6). 1507-1510 doi:10.1002/pssc.200565180
Sugita, K., Nagai, Y., Matsuoka, D., Hashimoto, A., Harima, H., Yamamoto, A. (2008) Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere. physica status solidi (c), 5 (6). 1765-1767 doi:10.1002/pssc.200778630
 
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