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Liu, Mingjiao, Kim, Hong Koo, Blachere, Jean (2002) Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories. Journal of Applied Physics, 91 (9). 5985-5996 doi:10.1063/1.1465504

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Reference TypeJournal (article/letter/editorial)
TitleLead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories
JournalJournal of Applied Physics
AuthorsLiu, MingjiaoAuthor
Kim, Hong KooAuthor
Blachere, JeanAuthor
Year2002 (May)Volume91
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1465504Search in ResearchGate
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Mindat Ref. ID5114839Long-form Identifiermindat:1:5:5114839:7
GUID0
Full ReferenceLiu, Mingjiao, Kim, Hong Koo, Blachere, Jean (2002) Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories. Journal of Applied Physics, 91 (9). 5985-5996 doi:10.1063/1.1465504
Plain TextLiu, Mingjiao, Kim, Hong Koo, Blachere, Jean (2002) Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories. Journal of Applied Physics, 91 (9). 5985-5996 doi:10.1063/1.1465504
In(2002, May) Journal of Applied Physics Vol. 91 (9) AIP Publishing

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Shannigrahi, S. R., Jang, Hyun M. (2001) Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories. Applied Physics Letters, 79 (7). 1051-1053 doi:10.1063/1.1392970
Basit, Nasir Abdul, Kim, Hong Koo, Blachere, Jean (1998) Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors. Applied Physics Letters, 73 (26). 3941-3943 doi:10.1063/1.122943
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Chen, Ye, McIntyre, Paul C. (2007) Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability. Applied Physics Letters, 91 (23). 232906pp. doi:10.1063/1.2822419
Chen, Ye, McIntyre, Paul C. (2007) Lead zirconate titanate ferroelectric thin film capacitors: Effects of surface treatments on ferroelectric properties. Applied Physics Letters, 91 (7). 72910pp. doi:10.1063/1.2769394
Min, Dae-Hong, Moon, Seung-Eon, Yoon, Sung-Min (2020) Design strategies for improvement in nonvolatile memory characteristics of metal-ferroelectric-metal-insulator-semiconductor capacitors using ferroelectric Hf0.5Zr0.5O2 thin films. Journal of Physics D: Applied Physics, 53. 115109pp. doi:10.1088/1361-6463/ab622d
Lim, S. H., Rastogi, A. C., Desu, S. B. (2004) Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application. Journal of Applied Physics, 96 (10). 5673-5682 doi:10.1063/1.1785836
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Barnett, Harold M. (1962) Evidence for a New Phase Boundary in the Ferroelectric Lead Zirconate‐Lead Titanate System. Journal of Applied Physics, 33 (4). 1606 doi:10.1063/1.1728781
Shih, Wen-Chieh, Juan, Pi-Chun, Lee, Joseph Ya-min (2008) Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications. Journal of Applied Physics, 103 (9). 94110pp. doi:10.1063/1.2924434
 
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