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Voronkov, V. V., Falster, R. (2002) Nucleation of oxide precipitates in vacancy-containing silicon. Journal of Applied Physics, 91 (9). 5802-5810 doi:10.1063/1.1467607

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Reference TypeJournal (article/letter/editorial)
TitleNucleation of oxide precipitates in vacancy-containing silicon
JournalJournal of Applied Physics
AuthorsVoronkov, V. V.Author
Falster, R.Author
Year2002 (May)Volume91
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1467607Search in ResearchGate
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Mindat Ref. ID5114900Long-form Identifiermindat:1:5:5114900:4
GUID0
Full ReferenceVoronkov, V. V., Falster, R. (2002) Nucleation of oxide precipitates in vacancy-containing silicon. Journal of Applied Physics, 91 (9). 5802-5810 doi:10.1063/1.1467607
Plain TextVoronkov, V. V., Falster, R. (2002) Nucleation of oxide precipitates in vacancy-containing silicon. Journal of Applied Physics, 91 (9). 5802-5810 doi:10.1063/1.1467607
In(2002, May) Journal of Applied Physics Vol. 91 (9) AIP Publishing

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Voronkov, V. V., Falster, R. (2001) Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon. Journal of Applied Physics, 89 (11). 5965-5971 doi:10.1063/1.1342806
Murphy, J. D., Bothe, K., Voronkov, V. V., Falster, R. J. (2013) On the mechanism of recombination at oxide precipitates in silicon. Applied Physics Letters, 102 (4). 42105pp. doi:10.1063/1.4789858
Murphy, J. D., McGuire, R. E., Bothe, K., Voronkov, V. V., Falster, R. J. (2014) Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion. Journal of Applied Physics, 116 (5). 53514pp. doi:10.1063/1.4892015
Murphy, J. D., Bothe, K., Olmo, M., Voronkov, V. V., Falster, R. J. (2011) The effect of oxide precipitates on minority carrier lifetime in p-type silicon. Journal of Applied Physics, 110 (5). 53713pp. doi:10.1063/1.3632067
Voronkov, V. V., Falster, R. (1999) Vacancy and self-interstitial concentration incorporated into growing silicon crystals. Journal of Applied Physics, 86 (11). 5975-5982 doi:10.1063/1.371642
Voronkov, V. V., Falster, R., Pichler, P. (2014) Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species. Applied Physics Letters, 104 (3). 32106pp. doi:10.1063/1.4863225
Voronkov, V. V., Falster, R., Londos, C. A. (2012) The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon. Journal of Applied Physics, 111 (11). 113530pp. doi:10.1063/1.4729323
Murphy, J. D., Al-Amin, M., Bothe, K., Olmo, M., Voronkov, V. V., Falster, R. J. (2015) The effect of oxide precipitates on minority carrier lifetime in n-type silicon. Journal of Applied Physics, 118 (21). 215706pp. doi:10.1063/1.4936852
Voronkov, V. V., Falster, R. (2006) Multispecies nitrogen diffusion in silicon. Journal of Applied Physics, 100 (8). 83511pp. doi:10.1063/1.2359609
Lang, V., Murphy, J. D., Falster, R. J., Morton, J. J. L. (2012) Spin-dependent recombination in Czochralski silicon containing oxide precipitates. Journal of Applied Physics, 111 (1). 13710pp. doi:10.1063/1.3675449
Murphy, J. D., Bothe, K., Krain, R., Voronkov, V. V., Falster, R. J. (2012) Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon. Journal of Applied Physics, 111 (11). 113709pp. doi:10.1063/1.4725475
 
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