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Tripathy, S., Chua, S. J., Hao, M. S., Sia, E. K., Ramam, A., Zhang, J., Sun, W. H., Wang, L. S. (2002) Micro-Raman scattering in laterally epitaxial overgrown GaN. Journal of Applied Physics, 91 (9). 5840-5852 doi:10.1063/1.1467952

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Reference TypeJournal (article/letter/editorial)
TitleMicro-Raman scattering in laterally epitaxial overgrown GaN
JournalJournal of Applied Physics
AuthorsTripathy, S.Author
Chua, S. J.Author
Hao, M. S.Author
Sia, E. K.Author
Ramam, A.Author
Zhang, J.Author
Sun, W. H.Author
Wang, L. S.Author
Year2002 (May)Volume91
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1467952Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114911Long-form Identifiermindat:1:5:5114911:0
GUID0
Full ReferenceTripathy, S., Chua, S. J., Hao, M. S., Sia, E. K., Ramam, A., Zhang, J., Sun, W. H., Wang, L. S. (2002) Micro-Raman scattering in laterally epitaxial overgrown GaN. Journal of Applied Physics, 91 (9). 5840-5852 doi:10.1063/1.1467952
Plain TextTripathy, S., Chua, S. J., Hao, M. S., Sia, E. K., Ramam, A., Zhang, J., Sun, W. H., Wang, L. S. (2002) Micro-Raman scattering in laterally epitaxial overgrown GaN. Journal of Applied Physics, 91 (9). 5840-5852 doi:10.1063/1.1467952
In(2002, May) Journal of Applied Physics Vol. 91 (9) AIP Publishing

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Tripathy, S., Chua, S. J., Ramam, A., Sia, E. K., Pan, J. S., Lim, R., Yu, G., Shen, Z. X. (2002) Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing. Journal of Applied Physics, 91 (5). 3398-3407 doi:10.1063/1.1446236
Sun, W. H., Chua, S. J., Wang, L. S., Zhang, X. H. (2002) Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN. Journal of Applied Physics, 91 (8). 4917-4921 doi:10.1063/1.1455682
Wang, L. S., Tripathy, S., Sun, W. H., Chua, S. J. (2004) Micro-Raman spectroscopy of Si-, C-, Mg- and Be-implanted GaN layers. Journal of Raman Spectroscopy, 35 (1). 73-77 doi:10.1002/jrs.1108
Zhou, H L, Chua, S J, Tripathy, S, Yakovlev, N L, Wang, L S, Liu, W (2007) AlGaN/GaN multiple quantum wells grown on facet-controlled epitaxial lateral overgrown GaN/sapphire templates. Journal of Physics: Condensed Matter, 19 (5). 56005pp. doi:10.1088/0953-8984/19/5/056005
Tripathy, S., Chua, S. J., Chen, P., Miao, Z. L. (2002) Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111). Journal of Applied Physics, 92 (7). 3503-3510 doi:10.1063/1.1502921
Zhou, H L, Chua, S J, Chow, S Y, Pan, H, Zhu, Y W, Feng, Y P, Wang, L S, Zang, K Y, Liu, W, Tripathy, S (2007) Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates. Journal of Physics: Condensed Matter, 19 (35). 356203pp. doi:10.1088/0953-8984/19/35/356203
Tripathy, S., Chua, S. J., Chen, P., Miao, Z. L. (2003) Erratum: “Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)” [J. Appl. Phys. 92, 3503 (2002)]. Journal of Applied Physics, 93 (1). 789 doi:10.1063/1.1530355
Wang, L. S., Tripathy, S., Wang, B. Z., Teng, J. H., Chow, S. Y., Chua, S. J. (2006) Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates. Applied Physics Letters, 89 (1). 11901pp. doi:10.1063/1.2218670
Tripathy, S., Lin, Vivian K. X., Vicknesh, S., Chua, S. J. (2007) Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique. Journal of Applied Physics, 101 (6). 63525pp. doi:10.1063/1.2713089
Hao, M., Chua, S. J., Zhang, X. H., Wang, W., Sia, E. K., Wang, L. S., Raman, A., Li, P., Liu, W. (2001) Electron-hole plasma emission fromIn0.3Ga0.7N/GaNmultiple quantum wells. Physical Review B, 63 (12) doi:10.1103/physrevb.63.121308
Song, J.-S., Rho, H., Jeong, M. S., Ju, J.-W., Lee, I.-H. (2010) Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire. Physical Review B, 81 (23) doi:10.1103/physrevb.81.233304
 
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