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Niu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., Parsons, G. N. (2002) Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. Journal of Applied Physics, 91 (9). 6173-6180 doi:10.1063/1.1468253

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Reference TypeJournal (article/letter/editorial)
TitleElementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications
JournalJournal of Applied Physics
AuthorsNiu, D.Author
Ashcraft, R. W.Author
Kelly, M. J.Author
Chambers, J. J.Author
Klein, T. M.Author
Parsons, G. N.Author
Year2002 (May)Volume91
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1468253Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114934Long-form Identifiermindat:1:5:5114934:1
GUID0
Full ReferenceNiu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., Parsons, G. N. (2002) Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. Journal of Applied Physics, 91 (9). 6173-6180 doi:10.1063/1.1468253
Plain TextNiu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., Parsons, G. N. (2002) Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. Journal of Applied Physics, 91 (9). 6173-6180 doi:10.1063/1.1468253
In(2002, May) Journal of Applied Physics Vol. 91 (9) AIP Publishing

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Niu, D., Ashcraft, R. W., Parsons, G. N. (2002) Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon. Applied Physics Letters, 80 (19). 3575-3577 doi:10.1063/1.1477268
Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., Parsons, G. N. (2002) Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon. Applied Physics Letters, 81 (4). 676-678 doi:10.1063/1.1496138
Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., Hegde, R. I., Baumvol, I. J. R., Parsons, G. N. (1999) Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100). Applied Physics Letters, 75 (25). 4001-4003 doi:10.1063/1.125519
Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., Parsons, G. N. (2003) Chemical, Physical, and Electrical Characterizations of Oxygen Plasma Assisted Chemical Vapor Deposited Yttrium Oxide on Silicon. Journal of the Electrochemical Society, 150. doi:10.1149/1.1566415
Li, V. Z-Q, Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Öztürk, M. C., Batchelor, D., Christensen, K., Maher, D. M. (1997) Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications. Applied Physics Letters, 71 (23). 3388-3390 doi:10.1063/1.120344
Haenen, K., Rouleau, J. F., Nesládek, M., Goyette, J., Stals, L. M., Bose, T. K. (2002) Dielectric measurements on oxidized and hydrogenated chemical vapor deposited diamond films. Journal of Applied Physics, 91 (10). 6670pp. doi:10.1063/1.1473215
Chambers, J. J., Parsons, G. N. (2000) Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics. Applied Physics Letters, 77 (15). 2385-2387 doi:10.1063/1.1316073
Gougousi, Theodosia, Niu, Dong, Ashcraft, Robert W., Parsons, Gregory N. (2003) Carbonate formation during post-deposition ambient exposure of high-k dielectrics. Applied Physics Letters, 83 (17). 3543-3545 doi:10.1063/1.1623316
Park, K. J., Doub, J. M., Gougousi, T., Parsons, G. N. (2005) Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition. Applied Physics Letters, 86 (5). 51903pp. doi:10.1063/1.1852079
Goel, N., Majhi, P., Tsai, W., Warusawithana, M., Schlom, D. G., Santos, M. B., Harris, J. S., Nishi, Y. (2007) High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric. Applied Physics Letters, 91 (9). 93509pp. doi:10.1063/1.2776846
Chambers, J. J., Parsons, G. N. (2001) Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon. Journal of Applied Physics, 90 (2). 918-933 doi:10.1063/1.1375018
 
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