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Harada, Yoshiyuki, Nakanishi, Hisayuki, Chichibu, Shigefusa F. (2002) Band gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 91 (9). 5909-5914 doi:10.1063/1.1468907

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Reference TypeJournal (article/letter/editorial)
TitleBand gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy
JournalJournal of Applied Physics
AuthorsHarada, YoshiyukiAuthor
Nakanishi, HisayukiAuthor
Chichibu, Shigefusa F.Author
Year2002 (May)Volume91
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1468907Search in ResearchGate
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Mindat Ref. ID5114951Long-form Identifiermindat:1:5:5114951:8
GUID0
Full ReferenceHarada, Yoshiyuki, Nakanishi, Hisayuki, Chichibu, Shigefusa F. (2002) Band gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 91 (9). 5909-5914 doi:10.1063/1.1468907
Plain TextHarada, Yoshiyuki, Nakanishi, Hisayuki, Chichibu, Shigefusa F. (2002) Band gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 91 (9). 5909-5914 doi:10.1063/1.1468907
In(2002, May) Journal of Applied Physics Vol. 91 (9) AIP Publishing

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Harada, Yoshiyuki, Nakanishi, Hisayuki, Chichibu, Shigefusa F. (2001) Structural studies of Cu–III–VI2 chalcopyrite semiconductor heteroepitaxial films grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 89 (10). 5406-5413 doi:10.1063/1.1364643
Harada, Yoshiyuki, Nakanishi, Hisayuki, Chichibu, Shigefusa F (2001) Green to ultraviolet photoluminescence from CuAlxGa1−xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 226 (4). 473-480 doi:10.1016/s0022-0248(01)01409-9
Chichibu, ShigeFusa, Harada, Yoshiyuki, Sugiyama, Mutsumi, Nakanishi, Hisayuki (2003) Metalorganic vapor phase epitaxy of Cu(AlxGa1−x)(SySe1−y)2 chalcopyrite semiconductors and their band offsets. Journal of Physics and Chemistry of Solids, 64. 1481-1489 doi:10.1016/s0022-3697(03)00125-2
Chichibu, Shigefusa, Nakanishi, Hisayuki, Shirakata, Sho (1995) Ultraviolet photoluminescence from CuAlS2 heteroepitaxial layers grown by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 66 (25). 3513-3515 doi:10.1063/1.113781
Chichibu, Shigefusa, Shirakata, Sho, Isomura, Shigehiro, Nakanishi, Hisayuki (1997) Visible and Ultraviolet Photoluminescence from Cu–III–VI2Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 36. 1703-1714 doi:10.1143/jjap.36.1703
Chichibu, Shigefusa (1997) Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 70 (14). 1840-1842 doi:10.1063/1.118708
Chichibu, S., Nakanishi, H., Shirakata, S., Isomura, S., Harada, Y., Matsumoto, S., Higuchi, H., Kariya, T. (1996) Preparation and characterization of CuAlxGa1−xSe2alloy layers grown by low‐pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 80 (6). 3338-3345 doi:10.1063/1.363245
Shirakata, Sho, Chichibu, Shigefusa (2000) Photoluminescence of CuGaS2 epitaxial layers grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 87 (8). 3793-3799 doi:10.1063/1.372416
Chichibu, S., Arita, M., Nakanishi, H., Nishio, J., Sugiura, L., Kokubun, Y., Itaya, K. (1998) Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 83 (5). 2860-2862 doi:10.1063/1.367048
Chichibu, Shigefusa, Matsumoto, Satoru, Shirakata, Sho, Isomura, Shigehiro, Higuchi, Hirofumi (1993) Excitonic photoluminescence in a CuAlSe2chalcopyrite semiconductor grown by low‐pressure metalorganic chemical‐vapor deposition. Journal of Applied Physics, 74 (10). 6446-6447 doi:10.1063/1.355129
Onuma, T., Shibata, T., Kosaka, K., Asai, K., Sumiya, S., Tanaka, M., Sota, T., Uedono, A., Chichibu, S. F. (2009) Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 105 (2). 23529pp. doi:10.1063/1.3068335
 
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