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Hayes, M., Schroeter, A., Wendler, E., Wesch, W., Auret, F. D., Nel, J. M. (2008) Damage formation in Ge during Ar+ implantation at 15 K. physica status solidi (c), 5 (2). 583-586 doi:10.1002/pssc.200776811

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Reference TypeJournal (article/letter/editorial)
TitleDamage formation in Ge during Ar+ implantation at 15 K
Journalphysica status solidi (c)
AuthorsHayes, M.Author
Schroeter, A.Author
Wendler, E.Author
Wesch, W.Author
Auret, F. D.Author
Nel, J. M.Author
Year2008 (February)Volume5
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200776811Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5115510Long-form Identifiermindat:1:5:5115510:2
GUID0
Full ReferenceHayes, M., Schroeter, A., Wendler, E., Wesch, W., Auret, F. D., Nel, J. M. (2008) Damage formation in Ge during Ar+ implantation at 15 K. physica status solidi (c), 5 (2). 583-586 doi:10.1002/pssc.200776811
Plain TextHayes, M., Schroeter, A., Wendler, E., Wesch, W., Auret, F. D., Nel, J. M. (2008) Damage formation in Ge during Ar+ implantation at 15 K. physica status solidi (c), 5 (2). 583-586 doi:10.1002/pssc.200776811
In(2008, February) physica status solidi (c) Vol. 5 (2) Wiley

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Hayes, M., Schroeter, A., Wendler, E., Wesch, W., Auret, F.D., Nel, J.M. (2009) Damage formation in Ge during Ar+ and He+ implantation at 15K. Physica B: Condensed Matter, 404 (22). 4382-4385 doi:10.1016/j.physb.2009.09.021
Hayes, M., Auret, F. D., Janse van Rensburg, P. J., Nel, J. M., Wesch, W., Wendler, E. (2007) Electrical characterization of He+ irradiated n-ZnO. physica status solidi (b), 244 (5). 1544-1548 doi:10.1002/pssb.200675135
Nel, J. M., Griffiths, T. C., van Schalkwyk, L., Auret, F. D., Hayes, M., van den Berg, N. (2008) The effect of etching on Ge(111) surfaces and Pd Schottky contacts. physica status solidi (c), 5 (2). 587-590 doi:10.1002/pssc.200776813
Auret, F. D., Wu, L., Meyer, W. E., Nel, J. M., Legodi, M. J., Hayes, M. (2004) Electrical characterisation of NiO/ZnO structures. physica status solidi (c), 1 (4). 674-677 doi:10.1002/pssc.200304191
Auret, F. D., Coelho, S. M. M., Hayes, M., Meyer, W. E., Nel, J. M. (2008) Electrical characterization of defects introduced in Ge during electron beam deposition of different metals. physica status solidi (a), 205 (1). 159-161 doi:10.1002/pssa.200776814
Coelho, S. M. M., Auret, F. D., Janse van Rensberg, P. J., Nyamhere, C., Nel, J. M., Hayes, M. (2008) IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition. physica status solidi (c), 5 (2). 626-629 doi:10.1002/pssc.200776815
Katsikini, M., Arvanitidis, J., Ves, S., Paloura, E. C., Wendler, E., Wesch, W. (2010) Indium implantation and annealing of GaN: Lattice damage and recovery. physica status solidi (c), 7 (1). 36-39 doi:10.1002/pssc.200982631
Chawanda, A., Nyamhere, C., Auret, F. D, Mtangi, W., Diale, M., Nel, J. M. (2010) Comparison of metal Schottky contacts on n-Ge (100) at different annealing temperatures. physica status solidi (c), 7 (2). 248-251 doi:10.1002/pssc.200982404
Kassier, G. H., Hayes, M., Auret, F. D., Diale, M., Svensson, B. G. (2008) Hall effect studies of donors and acceptors in different types of bulk ZnO modified by annealing and hydrogen implantation. physica status solidi (c), 5 (2). 569-572 doi:10.1002/pssc.200776826
Legodi, M. J., Auret, F. D., Hayes, M. (2004) Electrical characterization of ion bombarded AlGaN Schottky photodetectors. physica status solidi (c), 1 (9). 2328-2332 doi:10.1002/pssc.200404831
Auret, F. D., Janse van Rensburg, P. J., Hayes, M., Nel, J. M., Meyer, W. E., Decoster, S., Matias, V., Vantomme, A. (2006) Electrical characterization of defects introduced in n-type Ge during indium implantation. Applied Physics Letters, 89 (15). 152123pp. doi:10.1063/1.2360922
 
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