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Leconte, S., Golka, S., Pozzovivo, G., Strasser, G., Remmele, T., Albrecht, M., Monroy, E. (2008) Bi-stable behaviour in GaN-based resonant tunnelling diode structures. physica status solidi (c), 5 (2). 431-434 doi:10.1002/pssc.200777463

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Reference TypeJournal (article/letter/editorial)
TitleBi-stable behaviour in GaN-based resonant tunnelling diode structures
Journalphysica status solidi (c)
AuthorsLeconte, S.Author
Golka, S.Author
Pozzovivo, G.Author
Strasser, G.Author
Remmele, T.Author
Albrecht, M.Author
Monroy, E.Author
Year2008 (February)Volume5
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200777463Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5115576Long-form Identifiermindat:1:5:5115576:8
GUID0
Full ReferenceLeconte, S., Golka, S., Pozzovivo, G., Strasser, G., Remmele, T., Albrecht, M., Monroy, E. (2008) Bi-stable behaviour in GaN-based resonant tunnelling diode structures. physica status solidi (c), 5 (2). 431-434 doi:10.1002/pssc.200777463
Plain TextLeconte, S., Golka, S., Pozzovivo, G., Strasser, G., Remmele, T., Albrecht, M., Monroy, E. (2008) Bi-stable behaviour in GaN-based resonant tunnelling diode structures. physica status solidi (c), 5 (2). 431-434 doi:10.1002/pssc.200777463
In(2008, February) physica status solidi (c) Vol. 5 (2) Wiley

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