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Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2002) Atomic-scale analysis of deposition and characterization ofa-Si:H thin films grown from SiH radical precursor. Journal of Applied Physics, 92 (2). 842-852 doi:10.1063/1.1483920

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Reference TypeJournal (article/letter/editorial)
TitleAtomic-scale analysis of deposition and characterization ofa-Si:H thin films grown from SiH radical precursor
JournalJournal of Applied Physics
AuthorsSriraman, SaravanapriyanAuthor
Aydil, Eray S.Author
Maroudas, DimitriosAuthor
Year2002 (July 15)Volume92
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1483920Search in ResearchGate
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Mindat Ref. ID5115896Long-form Identifiermindat:1:5:5115896:9
GUID0
Full ReferenceSriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2002) Atomic-scale analysis of deposition and characterization ofa-Si:H thin films grown from SiH radical precursor. Journal of Applied Physics, 92 (2). 842-852 doi:10.1063/1.1483920
Plain TextSriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2002) Atomic-scale analysis of deposition and characterization ofa-Si:H thin films grown from SiH radical precursor. Journal of Applied Physics, 92 (2). 842-852 doi:10.1063/1.1483920
In(2002, July) Journal of Applied Physics Vol. 92 (2) AIP Publishing

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Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2004) Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor: Atomic-scale analysis. Journal of Applied Physics, 95 (4). 1792-1805 doi:10.1063/1.1636512
Valipa, Mayur S., Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2005) Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films. Surface Science, 574 (2). 123-143 doi:10.1016/j.susc.2004.10.039
Sriraman, Saravanapriyan, Valipa, Mayur S., Aydil, Eray S., Maroudas, Dimitrios (2006) Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H2 plasmas. Journal of Applied Physics, 100 (5). 53514pp. doi:10.1063/1.2229426
Valipa, Mayur S., Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2006) Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds. Journal of Applied Physics, 100 (5). 53515pp. doi:10.1063/1.2229429
Sriraman, Saravanapriyan, Agarwal, Sumit, Aydil, Eray S., Maroudas, Dimitrios (2002) Mechanism of hydrogen-induced crystallization of amorphous silicon. Nature, 418 (6893). 62-65 doi:10.1038/nature00866
Ramalingam, Shyam, Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2001) Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation. Applied Physics Letters, 78 (18). 2685-2687 doi:10.1063/1.1367298
Agarwal, Sumit, Sriraman, Saravanapriyan, Takano, Akihiro, van de Sanden, M.C.M, Aydil, Eray S, Maroudas, Dimitrios (2002) Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces. Surface Science, 515 (1). doi:10.1016/s0039-6028(02)01879-4
Ramalingam, Shyam, Maroudas, Dimitrios, Aydil, Eray S. (1998) Interactions of SiH radicals with silicon surfaces: An atomic-scale simulation study. Journal of Applied Physics, 84 (7). 3895-3911 doi:10.1063/1.368569
Sriraman, Saravanapriyan, Mahalingam, Pushpa, Aydil, Eray S, Maroudas, Dimitrios (2003) Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si()-(2×1) surfaces. Surface Science, 540 (2). doi:10.1016/s0039-6028(03)00869-0
Ramalingam, Shyam, Maroudas, Dimitrios, Aydil, Eray S. (1998) Atomistic simulation of SiH interactions with silicon surfaces during deposition from silane containing plasmas. Applied Physics Letters, 72 (5). 578-580 doi:10.1063/1.120764
Walch, Stephen P., Ramalingam, Shyam, Sriraman, Saravanapriyan, Aydil, Eray S., Maroudas, Dimitrios (2001) Mechanisms and energetics of SiH3 adsorption on the pristine Si(001)-(2×1) surface. Chemical Physics Letters, 344. 249-255 doi:10.1016/s0009-2614(01)00777-1
 
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