Yoon, Seok-Hyun, Kim, Hwan (2002) Effect of donor (Nb) concentration on the bulk electrical resistivity of Nb-doped barium titanate. Journal of Applied Physics, 92 (2). 1039-1047 doi:10.1063/1.1486049
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Effect of donor (Nb) concentration on the bulk electrical resistivity of Nb-doped barium titanate | ||
Journal | Journal of Applied Physics | ||
Authors | Yoon, Seok-Hyun | Author | |
Kim, Hwan | Author | ||
Year | 2002 (July 15) | Volume | 92 |
Issue | 2 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.1486049Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5115931 | Long-form Identifier | mindat:1:5:5115931:1 |
GUID | 0 | ||
Full Reference | Yoon, Seok-Hyun, Kim, Hwan (2002) Effect of donor (Nb) concentration on the bulk electrical resistivity of Nb-doped barium titanate. Journal of Applied Physics, 92 (2). 1039-1047 doi:10.1063/1.1486049 | ||
Plain Text | Yoon, Seok-Hyun, Kim, Hwan (2002) Effect of donor (Nb) concentration on the bulk electrical resistivity of Nb-doped barium titanate. Journal of Applied Physics, 92 (2). 1039-1047 doi:10.1063/1.1486049 | ||
In | (2002, July) Journal of Applied Physics Vol. 92 (2) AIP Publishing |
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