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Shim, H. J., Hwang, I. J., Kim, K. S., Cho, B. K., Kim, Jin-Tae, Sok, J. H. (2002) Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier. Journal of Applied Physics, 92 (2). 1095-1098 doi:10.1063/1.1488252

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Reference TypeJournal (article/letter/editorial)
TitleVoltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier
JournalJournal of Applied Physics
AuthorsShim, H. J.Author
Hwang, I. J.Author
Kim, K. S.Author
Cho, B. K.Author
Kim, Jin-TaeAuthor
Sok, J. H.Author
Year2002 (July 15)Volume92
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1488252Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116008Long-form Identifiermindat:1:5:5116008:9
GUID0
Full ReferenceShim, H. J., Hwang, I. J., Kim, K. S., Cho, B. K., Kim, Jin-Tae, Sok, J. H. (2002) Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier. Journal of Applied Physics, 92 (2). 1095-1098 doi:10.1063/1.1488252
Plain TextShim, H. J., Hwang, I. J., Kim, K. S., Cho, B. K., Kim, Jin-Tae, Sok, J. H. (2002) Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier. Journal of Applied Physics, 92 (2). 1095-1098 doi:10.1063/1.1488252
In(2002, July) Journal of Applied Physics Vol. 92 (2) AIP Publishing

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Kim, K. S., Shim, H. J., Hwang, I. J., Cho, B. K., Seok, J. H., Kim, Jin-Tae (2002) Magnetic field dependent noise in magnetic tunnel junction. Journal of Applied Physics, 91 (10). 8804pp. doi:10.1063/1.1447211
Shim, Heejae, Park, J. M., Kim, K. P., Cho, B. K., Kim, Jin-Tae, Park, Y. (2003) Magnetic tunnel junctions with a tunnel barrier formed by N2O plasma. Applied Physics Letters, 83 (22). 4583-4585 doi:10.1063/1.1631383
Mun, B. S., Moon, J. C., Hong, S. W., Kang, K. S., Kim, K., Kim, T. W., Ju, H. L. (2006) X-ray absorption spectroscopy studies on magnetic tunnel junctions with AlO and AlN tunnel barriers. Journal of Applied Physics, 99 (8). doi:10.1063/1.2176055
Kim, D. K., Cho, J. U., Chun, B. S., Shin, K. H., Lee, K. J., Tsunoda, M., Takahashi, M., Kim, Y. K. (2012) Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers. Applied Physics Letters, 101 (23). 232401pp. doi:10.1063/1.4768931
Shim, Heejae, Cho, B. K., Kim, Jin-Tae, Kim, T. W., Park, W. J. (2003) Effect of nitrogen plasma treatment at the Al2O3/Fe interface in magnetic tunnel junction. Journal of Applied Physics, 93 (10). 7026-7028 doi:10.1063/1.1540173
Lee, Hyeon-Jun, Jeong, Se-Young, Cho, Chae Ryong, Lee, J. H., Joo, S. J., Shin, K. H., Lee, B. C., Kim, Tae-Suk, Park, J.-H., Kang, J.-S., Rhie, K. (2005) X-ray photoelectron spectroscopy study of magnetic tunnel junctions. Journal of Applied Physics, 97 (3). 33906pp. doi:10.1063/1.1836853
Yim, H. I., Lee, S. Y., Hwang, J. Y., Rhee, J. R., Chun, B. S., Wang, K. L., Kim, Y. K., Kim, T. W., Lee, S. S., Hwang, D. G. (2008) Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers. physica status solidi (a), 205 (8). 1847-1850 doi:10.1002/pssa.200723639
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Joo, Sungjung, Jung, K. Y., Lee, B. C., Kim, Tae-Suk, Shin, K. H., Jung, Myung-Hwa, Rho, K.-J., Park, J.-H., Hong, Jinki, Rhie, K. (2012) Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance. Applied Physics Letters, 100 (17). 172406pp. doi:10.1063/1.4704557
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