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Inada, Masaki, Nakajima, Akira, Piao, Guanxi, Shimizu, Mitsuaki, Yano, Yoshiki, Ubukata, Akinori (2008) DC characteristics of AlGaN/GaN high electron mobility transistors. physica status solidi (c), 5 (9). 2991-2993 doi:10.1002/pssc.200779263

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Reference TypeJournal (article/letter/editorial)
TitleDC characteristics of AlGaN/GaN high electron mobility transistors
Journalphysica status solidi (c)
AuthorsInada, MasakiAuthor
Nakajima, AkiraAuthor
Piao, GuanxiAuthor
Shimizu, MitsuakiAuthor
Yano, YoshikiAuthor
Ubukata, AkinoriAuthor
Year2008 (July)Volume5
Issue9
PublisherWiley
DOIdoi:10.1002/pssc.200779263Search in ResearchGate
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Mindat Ref. ID5116908Long-form Identifiermindat:1:5:5116908:0
GUID0
Full ReferenceInada, Masaki, Nakajima, Akira, Piao, Guanxi, Shimizu, Mitsuaki, Yano, Yoshiki, Ubukata, Akinori (2008) DC characteristics of AlGaN/GaN high electron mobility transistors. physica status solidi (c), 5 (9). 2991-2993 doi:10.1002/pssc.200779263
Plain TextInada, Masaki, Nakajima, Akira, Piao, Guanxi, Shimizu, Mitsuaki, Yano, Yoshiki, Ubukata, Akinori (2008) DC characteristics of AlGaN/GaN high electron mobility transistors. physica status solidi (c), 5 (9). 2991-2993 doi:10.1002/pssc.200779263
In(2008, July) physica status solidi (c) Vol. 5 (9) Wiley

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