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Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2008) 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. physica status solidi (c), 5 (9). 2969-2971 doi:10.1002/pssc.200779303

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Reference TypeJournal (article/letter/editorial)
Title226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire
Journalphysica status solidi (c)
AuthorsHirayama, HidekiAuthor
Yatabe, TohruAuthor
Noguchi, NorimichiAuthor
Ohashi, TomoakiAuthor
Kamata, NorihikoAuthor
Year2008 (July)Volume5
Issue9
PublisherWiley
DOIdoi:10.1002/pssc.200779303Search in ResearchGate
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Mindat Ref. ID5116988Long-form Identifiermindat:1:5:5116988:6
GUID0
Full ReferenceHirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2008) 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. physica status solidi (c), 5 (9). 2969-2971 doi:10.1002/pssc.200779303
Plain TextHirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2008) 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. physica status solidi (c), 5 (9). 2969-2971 doi:10.1002/pssc.200779303
In(2008, July) physica status solidi (c) Vol. 5 (9) Wiley

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Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2007) 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Applied Physics Letters, 91 (7). 71901pp. doi:10.1063/1.2770662
Hirayama, Hideki, Yatabe, Tohru, Ohashi, Tomoaki, Kamata, Norihiko (2008) Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. physica status solidi (c), 5 (6). 2283-2285 doi:10.1002/pssc.200778697
Norimichi, Noguchi, Hirayama, Hideki, Yatabe, Tohru, Kamata, Norihiko (2009) 222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers. physica status solidi (c), 6. doi:10.1002/pssc.200880923
Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko, Hirayama, Hideki (2008) Improvement of surface roughness and reduction of threading dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth. physica status solidi (c), 5 (6). 1968-1970 doi:10.1002/pssc.200778551
Hirayama, Hideki, Norimatsu, Jun, Noguchi, Norimichi, Fujikawa, Sachie, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates. physica status solidi (c), 6. doi:10.1002/pssc.200880959
Hirayama, Hideki, Fujikawa, Sachie, Noguchi, Norimichi, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. physica status solidi (a), 206 (6). 1176-1182 doi:10.1002/pssa.200880961
Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Noguchi, Norimichi, Tsubaki, Kenji (2012) Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system. physica status solidi (c), 9 (3). 749-752 doi:10.1002/pssc.201100358
Hirayama, Hideki, Fujikawa, Sachie (2008) Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method. physica status solidi (c), 5 (6). 2312-2315 doi:10.1002/pssc.200778732
Fujikawa, Sachie, Hirayama, Hideki, Maeda, Noritoshi (2012) High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates. physica status solidi (c), 9 (3). 790-793 doi:10.1002/pssc.201100453
Jo, Masafumi, Oshima, Issei, Matsumoto, Takuma, Maeda, Noritoshi, Kamata, Norihiko, Hirayama, Hideki (2017) Structural and electrical properties of semipolar (11‐22) AlGaN grown on m‐plane (1‐100) sapphire substrates. physica status solidi c, 14 (8) doi:10.1002/pssc.201600248
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666
 
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