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Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Realization of high-crystalline-quality and thick GaInN films. physica status solidi (c), 6. doi:10.1002/pssc.200880989

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Reference TypeJournal (article/letter/editorial)
TitleRealization of high-crystalline-quality and thick GaInN films
Journalphysica status solidi (c)
AuthorsSenda, RyotaAuthor
Matsubara, TetsuyaAuthor
Iida, DaisukeAuthor
Iwaya, MotoakiAuthor
Kamiyama, SatoshiAuthor
Amano, HiroshiAuthor
Akasaki, IsamuAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880989Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117414Long-form Identifiermindat:1:5:5117414:3
GUID0
Full ReferenceSenda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Realization of high-crystalline-quality and thick GaInN films. physica status solidi (c), 6. doi:10.1002/pssc.200880989
Plain TextSenda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Realization of high-crystalline-quality and thick GaInN films. physica status solidi (c), 6. doi:10.1002/pssc.200880989
In(2009) physica status solidi (c) Vol. 6. Wiley

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Senda, Ryota, Miura, Aya, Kawashima, Takeshi, Iida, Daisuke, Nagai, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2008) Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth. physica status solidi (c), 5 (9). 3045-3047 doi:10.1002/pssc.200779252
Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Growth of thick GaInN on grooved (101¯1¯) GaN/(101¯2¯) 4H-SiC. Journal of Crystal Growth, 311 (10). 2926-2928 doi:10.1016/j.jcrysgro.2009.01.062
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