Reference Type | Journal (article/letter/editorial) |
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Title | Beneficial effect of a low deposition temperature of hot-wire deposited intrinsic amorphous silicon for solar cells |
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Journal | Journal of Applied Physics |
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Authors | van Veen, M. K. | Author |
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Schropp, R. E. I. | Author |
Year | 2003 (January) | Volume | 93 |
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Issue | 1 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.1527208Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5117573 | Long-form Identifier | mindat:1:5:5117573:5 |
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GUID | 0 |
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Full Reference | van Veen, M. K., Schropp, R. E. I. (2003) Beneficial effect of a low deposition temperature of hot-wire deposited intrinsic amorphous silicon for solar cells. Journal of Applied Physics, 93 (1). 121-125 doi:10.1063/1.1527208 |
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Plain Text | van Veen, M. K., Schropp, R. E. I. (2003) Beneficial effect of a low deposition temperature of hot-wire deposited intrinsic amorphous silicon for solar cells. Journal of Applied Physics, 93 (1). 121-125 doi:10.1063/1.1527208 |
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In | (2003, January) Journal of Applied Physics Vol. 93 (1) AIP Publishing |
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