Reference Type | Journal (article/letter/editorial) |
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Title | Low switching current flux-closed magnetoresistive random access memory |
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Journal | Journal of Applied Physics |
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Authors | Zheng, Y. K. | Author |
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Wu, Y. H. | Author |
Li, K. B. | Author |
Qiu, J. J. | Author |
Shen, Y. T. | Author |
An, L. H. | Author |
Guo, Z. B. | Author |
Han, G. C. | Author |
Luo, P. | Author |
You, D. | Author |
Liu, Z. Y. | Author |
Year | 2003 (May 15) | Volume | 93 |
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Issue | 10 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.1557372Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5118766 | Long-form Identifier | mindat:1:5:5118766:0 |
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GUID | 0 |
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Full Reference | Zheng, Y. K., Wu, Y. H., Li, K. B., Qiu, J. J., Shen, Y. T., An, L. H., Guo, Z. B., Han, G. C., Luo, P., You, D., Liu, Z. Y. (2003) Low switching current flux-closed magnetoresistive random access memory. Journal of Applied Physics, 93 (10). 7307-7309 doi:10.1063/1.1557372 |
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Plain Text | Zheng, Y. K., Wu, Y. H., Li, K. B., Qiu, J. J., Shen, Y. T., An, L. H., Guo, Z. B., Han, G. C., Luo, P., You, D., Liu, Z. Y. (2003) Low switching current flux-closed magnetoresistive random access memory. Journal of Applied Physics, 93 (10). 7307-7309 doi:10.1063/1.1557372 |
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In | (2003, May) Journal of Applied Physics Vol. 93 (10) AIP Publishing |
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