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Ma, Bei, Hideto, Miyake, Hiramatsu, Kazumasa, Harima, Hiroshi (2011) Stress analysis of a-plane GaN grown on r-plane sapphire substrates. physica status solidi (c), 8 (7). 2066-2068 doi:10.1002/pssc.201001166

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Reference TypeJournal (article/letter/editorial)
TitleStress analysis of a-plane GaN grown on r-plane sapphire substrates
Journalphysica status solidi (c)
AuthorsMa, BeiAuthor
Hideto, MiyakeAuthor
Hiramatsu, KazumasaAuthor
Harima, HiroshiAuthor
Year2011 (July)Volume8
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.201001166Search in ResearchGate
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Mindat Ref. ID5121640Long-form Identifiermindat:1:5:5121640:3
GUID0
Full ReferenceMa, Bei, Hideto, Miyake, Hiramatsu, Kazumasa, Harima, Hiroshi (2011) Stress analysis of a-plane GaN grown on r-plane sapphire substrates. physica status solidi (c), 8 (7). 2066-2068 doi:10.1002/pssc.201001166
Plain TextMa, Bei, Hideto, Miyake, Hiramatsu, Kazumasa, Harima, Hiroshi (2011) Stress analysis of a-plane GaN grown on r-plane sapphire substrates. physica status solidi (c), 8 (7). 2066-2068 doi:10.1002/pssc.201001166
In(2011, July) physica status solidi (c) Vol. 8 (7) Wiley

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Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa (2010) a -plane AlN and AlGaN growth on r -plane sapphire by MOVPE. physica status solidi (c), 7 (7). 2107-2110 doi:10.1002/pssc.200983601
Takagi, Yuta, Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa (2011) HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer. physica status solidi (c), 8 (2). 470-472 doi:10.1002/pssc.201000582
Takagi, Yuta, Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa (2012) Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE. physica status solidi (c), 9 (3). 576-579 doi:10.1002/pssc.201100797
Miyagawa, Reina, Yang, Shibo, Miyake, Hideto, Hiramatsu, Kazumasa (2011) Control of AlN buffer/sapphire substrate interface for AlN growth. physica status solidi (c), 8 (7). 2069-2071 doi:10.1002/pssc.201001186
Ma, Bei, Hu, Weiguo, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 95 (12). 121910pp. doi:10.1063/1.3237164
Kawashima, Yuji, Murakami, Kazuma, Abe, Yuki, Okada, Narihito, Tadatomo, Kazuyuki (2010) Growth mechanism of nonpolar m -plane GaN on maskless patterned a -plane sapphire substrate. physica status solidi (c), 7 (7). 2066-2068 doi:10.1002/pssc.200983511
Ma, Bei, Miyagawa, Reina, Hu, Weiguo, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE. Journal of Crystal Growth, 311 (10). 2899-2902 doi:10.1016/j.jcrysgro.2009.01.040
Okumura, Kenta, Nomura, Takuya, Miyake, Hideto, Hiramatsu, Kazumasa, Eryuu, Osamu (2011) HVPE growth of AlN on trench- patterned 6H-SiC substrates. physica status solidi (c), 8 (2). 467-469 doi:10.1002/pssc.201000584
Kuwano, Noriyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu (2011) Evidence for moving of threading dislocations during the VPE growth in GaN thin layers. physica status solidi (c), 8 (5). 1487-1490 doi:10.1002/pssc.201001126
Wu, Jie-Jun, Katagiri, Yusuke, Okuura, Kazuki, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880767
Fujita, Kohei, Okuura, Kazuteru, Miyake, Hideto, Hiramatsu, Kazumasa, Hirayama, Hideki (2011) HVPE growth of thick AlN on trench-patterned substrate. physica status solidi (c), 8 (5). 1483-1486 doi:10.1002/pssc.201001130
 
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